| Presentation | 2017-05-26 N-polar GaN MIS-HEMTs with Flat Interface Grown by Optimized MOVPE Kiattiwut Prasertsuk, Tomoyuki Tanikawa, Takeshi Kimura, Shigeyuki Kuboya, Tetsuya Suemitsu, Takashi Matsuoka, |
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| PDF Download Page |  PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | An N-polar GaN high electron mobility transistor (HEMT) has an advantage over a Ga-polar HEMT from viewpoints of a potential to realize low ohmic contact resistance on both source and drain due to the electrodes are formed on the top GaN layers, and better carrier confinement due to its natural back barrier. In this work, the N-polar GaN/Al0.32Ga0.68N/GaN heterostructure with a smooth interface has been demonstrated by metalorganic vapor phase epitaxy (MOVPE) grown on a 0.8º off-cut sapphire substrate. To suppress the gate leakage current, a metal-insulator-semiconductor (MIS) gate structure with a 10-nm-thick SiNx insulator layer has been introduced. The gate leakage current has been drastically suppressed by this MIS-HEMT in comparison with a Schottky gate HEMT. As a result, this MIS-HEMT realizes a pinch-off operation with a threshold voltage of －9 V. A prototype N-polar GaN MIS-HEMT also exhibits a promising device characteristic with a maximum current density of over 500 mA/mm. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | Gallium Nitride (GaN)N-polaritymetalorganic vapor phase epitaxy (MOVPE)metal-insulator-semiconductor (MIS)high electron mobility transistor (HEMT) |
| Paper # | ED2017-26,CPM2017-12,SDM2017-20 |
| Date of Issue | 2017-05-18 (ED, CPM, SDM) |
| Conference Information | |
| Committee | SDM / ED / CPM |
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| Conference Date | 2017/5/25(2days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | VBL, Nagoya University |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
| Chair | Tatsuya Kunikiyo(Renesas) / Koichi Maezawa(Univ. of Toyama) / Satoru Noge(Numazu National College of Tech.) |
| Vice Chair | Takahiro Shinada(Tohoku Univ.) / Kunio Tsuda(Toshiba) / Fumihiko Hirose(Yamagata Univ.) |
| Secretary | Takahiro Shinada(Tohoku Univ.) / Kunio Tsuda(Renesas) / Fumihiko Hirose(JAIST) |
| Assistant | Hiroya Ikeda(Shizuoka Univ.) / Masataka Higashiwaki(NICT) / Toshiyuki Oishi(Saga Univ.) / Takashi Sakamoto(NTT) / Yuichi Nakamura(Toyohashi Univ. of Tech.) |
| Paper Information | |
| Registration To | Technical Committee on Silicon Device and Materials / Technical Committee on Electron Devices / Technical Committee on Component Parts and Materials |
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| Language | ENG |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | N-polar GaN MIS-HEMTs with Flat Interface Grown by Optimized MOVPE |
| Sub Title (in English) | |
| Keyword(1) | Gallium Nitride (GaN)N-polaritymetalorganic vapor phase epitaxy (MOVPE)metal-insulator-semiconductor (MIS)high electron mobility transistor (HEMT) |
| 1st Author's Name | Kiattiwut Prasertsuk |
| 1st Author's Affiliation | Tohoku University(Tohoku Univ.) |
| 2nd Author's Name | Tomoyuki Tanikawa |
| 2nd Author's Affiliation | Tohoku University(Tohoku Univ.) |
| 3rd Author's Name | Takeshi Kimura |
| 3rd Author's Affiliation | Tohoku University(Tohoku Univ.) |
| 4th Author's Name | Shigeyuki Kuboya |
| 4th Author's Affiliation | Tohoku University(Tohoku Univ.) |
| 5th Author's Name | Tetsuya Suemitsu |
| 5th Author's Affiliation | Tohoku University(Tohoku Univ.) |
| 6th Author's Name | Takashi Matsuoka |
| 6th Author's Affiliation | Tohoku University(Tohoku Univ.) |
| Date | 2017-05-26 |
| Paper # | ED2017-26,CPM2017-12,SDM2017-20 |
| Volume (vol) | vol.117 |
| Number (no) | ED-58,CPM-59,SDM-60 |
| Page | pp.pp.59-64(ED), pp.59-64(CPM), pp.59-64(SDM), |
| #Pages | 6 |
| Date of Issue | 2017-05-18 (ED, CPM, SDM) |