| Presentation | 2017-05-19 Analysis of High-frequency Signal Loss for Interconnecting Pads on the Si Substrate Yoshito Kato, Daichi Ichikawa, Hao San, Tsugumichi Shibata, |
|---|---|
| PDF Download Page |  PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | The mechanism of the generation of high-frequency loss depending on the conductivity of Si substrate in the integrated circuit structure is investigated. Specifically, frequency characteristics of the loss at the substrate underneath the electrode pad structure were analyzed using electromagnetic field simulations and compared with the results by the equivalent circuit model presented in a previous study. Increase in loss due to the relaxation of the interfacial polarization of the substrate layers coincides with the result predicted from the equivalent circuit model, which verifies the validity of the equivalent circuit. On the other hand, it is found that the influence of the skin effect, which is not included in the equivalent circuit, may be remarkable in a high-frequency region exceeding 10 GHz in some cases. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | Si Substrate / Integrated Circuit / High-frequency Loss / Electromagnetic Simulation / Equivalent Circuit Model |
| Paper # | EST2017-1 |
| Date of Issue | 2017-05-12 (EST) |
| Conference Information | |
| Committee | EST |
|---|---|
| Conference Date | 2017/5/19(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | Tohoku University Tokyo Branch |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | Simulation technology, etc. |
| Chair | Hideaki Kimura(NTT) |
| Vice Chair | Akimasa Hirata(Nagoya Inst. of Tech.) / Shinichiro Ohnuki(Nihon Univ.) |
| Secretary | Akimasa Hirata(Muroran Inst. of Tech.) / Shinichiro Ohnuki(Tohoku Univ.) |
| Assistant | Atsushi Kezuka(ENRI) / Kenji Taguchi(Kitami Inst. of Tech.) |
| Paper Information | |
| Registration To | Technical Committee on Electronics Simulation Technology |
|---|---|
| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Analysis of High-frequency Signal Loss for Interconnecting Pads on the Si Substrate |
| Sub Title (in English) | |
| Keyword(1) | Si Substrate |
| Keyword(2) | Integrated Circuit |
| Keyword(3) | High-frequency Loss |
| Keyword(4) | Electromagnetic Simulation |
| Keyword(5) | Equivalent Circuit Model |
| 1st Author's Name | Yoshito Kato |
| 1st Author's Affiliation | Tokyo City University(TCU) |
| 2nd Author's Name | Daichi Ichikawa |
| 2nd Author's Affiliation | Tokyo City University(TCU) |
| 3rd Author's Name | Hao San |
| 3rd Author's Affiliation | Tokyo City University(TCU) |
| 4th Author's Name | Tsugumichi Shibata |
| 4th Author's Affiliation | Tokyo City University(TCU) |
| Date | 2017-05-19 |
| Paper # | EST2017-1 |
| Volume (vol) | vol.117 |
| Number (no) | EST-37 |
| Page | pp.pp.1-4(EST), |
| #Pages | 4 |
| Date of Issue | 2017-05-12 (EST) |