| Presentation | 2017-05-25 Realization of high frequency LLC resonant converter with GaN device Takehiro Shimizu, Yoshiaki Matsuda, Yousuke Inoue, |
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| PDF Download Page |  PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | Recently, the miniaturization and thinning of equipment has advanced, demand for miniaturization of the power supply to be mounted has become stronger. In order to miniaturize the power supply, the switching frequency should be increased to the high frequency, but depending on the characteristics of the parts used so far, making it difficult to increase the frequency. However, the diffusion of SiC and GaN called next-generation semiconductor devices and the diffusion of circuit topology with the evolution, the possibility of high frequency (MHz) switching has come to be seen. This paper shows the contents of considering various possible problems concerning high frequency power supply. Also, the evaluation results of the prototype power supply based on the contents of consideration are reported. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | LLC resonant converter / high frequency / miniaturization / GaN device |
| Paper # | EE2017-2 |
| Date of Issue | 2017-05-18 (EE) |
| Conference Information | |
| Committee | EE / IEE-HCA |
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| Conference Date | 2017/5/25(2days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | The Kikai Shinko Kaikan building |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
| Chair | Fujio Kurokawa(Nagasaki Institute of Applied Science) |
| Vice Chair | Masatoshi Nakahara(Sojo Univ.) |
| Secretary | Masatoshi Nakahara(Fukuoka Univ.) / (NTT) |
| Assistant | Hidenori Maruta(Nagasaki Univ.) / Takashi Matsushita(NTT-F) |
| Paper Information | |
| Registration To | Technical Committee on Energy Engineering in Electronics and Communications / Technical Meeting on Home and Consumer Appliances |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Realization of high frequency LLC resonant converter with GaN device |
| Sub Title (in English) | |
| Keyword(1) | LLC resonant converter |
| Keyword(2) | high frequency |
| Keyword(3) | miniaturization |
| Keyword(4) | GaN device |
| 1st Author's Name | Takehiro Shimizu |
| 1st Author's Affiliation | Shindengen Electric Manufacturing Co., Ltd.(Shindengen) |
| 2nd Author's Name | Yoshiaki Matsuda |
| 2nd Author's Affiliation | STES Co., Ltd.(STES) |
| 3rd Author's Name | Yousuke Inoue |
| 3rd Author's Affiliation | Shindengen Kumamoto Techno-Research Co., Ltd.(Shindengen Kumamoto) |
| Date | 2017-05-25 |
| Paper # | EE2017-2 |
| Volume (vol) | vol.117 |
| Number (no) | EE-53 |
| Page | pp.pp.7-11(EE), |
| #Pages | 5 |
| Date of Issue | 2017-05-18 (EE) |