Presentation | 2017-05-26 Extreme Thermal Stability of 1550 nm Band Highly Stacked QD-LDs with p-Doped Structure Atsushi Matsumoto, Kouichi Akahane, Toshimasa Umezawa, Naokatsu Yamamoto, |
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PDF Download Page | PDF download Page Link |
Abstract(in Japanese) | (See Japanese page) |
Abstract(in English) | In this paper, we fabricated 1.55-μm band p-doped broad-area (BA) and ridge structured 30-layer stacked quantum-dot (QD) laser diodes (LDs) grown on an InP(311)B substrate via a delta-doping method employing a strain compensation technique. We doped Be atoms to a depth of 5 nm from the bottom of each QD layer. The concentration of Be atoms doped in the InGaAlAs spacer layer was 1 x 1018 cm-3. We observed that the fabricated BA-LDs and ridge QD-LD had extremely stable temperature characteristics, and a characteristic temperature T0 of more than 2156 K and 1926 K was obtained. |
Keyword(in Japanese) | (See Japanese page) |
Keyword(in English) | semiconductor quantum dot / p-doped / thermal stability |
Paper # | LQE2017-19 |
Date of Issue | 2017-05-18 (LQE) |
Conference Information | |
Committee | LQE / LSJ |
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Conference Date | 2017/5/25(2days) |
Place (in Japanese) | (See Japanese page) |
Place (in English) | |
Topics (in Japanese) | (See Japanese page) |
Topics (in English) | |
Chair | Susumu Noda(Kyoto Univ.) |
Vice Chair | Tsuyoshi Yamamoto(Fujitsu Labs.) |
Secretary | Tsuyoshi Yamamoto(NTT) / (Tohoku Univ.) |
Assistant |
Paper Information | |
Registration To | Technical Committee on Lasers and Quantum Electronics / The Laser Society of Japan |
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Language | JPN |
Title (in Japanese) | (See Japanese page) |
Sub Title (in Japanese) | (See Japanese page) |
Title (in English) | Extreme Thermal Stability of 1550 nm Band Highly Stacked QD-LDs with p-Doped Structure |
Sub Title (in English) | |
Keyword(1) | semiconductor quantum dot |
Keyword(2) | p-doped |
Keyword(3) | thermal stability |
1st Author's Name | Atsushi Matsumoto |
1st Author's Affiliation | National Institute of Information and Communications Technology(NICT) |
2nd Author's Name | Kouichi Akahane |
2nd Author's Affiliation | National Institute of Information and Communications Technology(NICT) |
3rd Author's Name | Toshimasa Umezawa |
3rd Author's Affiliation | National Institute of Information and Communications Technology(NICT) |
4th Author's Name | Naokatsu Yamamoto |
4th Author's Affiliation | National Institute of Information and Communications Technology(NICT) |
Date | 2017-05-26 |
Paper # | LQE2017-19 |
Volume (vol) | vol.117 |
Number (no) | LQE-61 |
Page | pp.pp.79-84(LQE), |
#Pages | 6 |
Date of Issue | 2017-05-18 (LQE) |