Presentation 2017-05-26
Extreme Thermal Stability of 1550 nm Band Highly Stacked QD-LDs with p-Doped Structure
Atsushi Matsumoto, Kouichi Akahane, Toshimasa Umezawa, Naokatsu Yamamoto,
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Abstract(in Japanese) (See Japanese page)
Abstract(in English) In this paper, we fabricated 1.55-μm band p-doped broad-area (BA) and ridge structured 30-layer stacked quantum-dot (QD) laser diodes (LDs) grown on an InP(311)B substrate via a delta-doping method employing a strain compensation technique. We doped Be atoms to a depth of 5 nm from the bottom of each QD layer. The concentration of Be atoms doped in the InGaAlAs spacer layer was 1 x 1018 cm-3. We observed that the fabricated BA-LDs and ridge QD-LD had extremely stable temperature characteristics, and a characteristic temperature T0 of more than 2156 K and 1926 K was obtained.
Keyword(in Japanese) (See Japanese page)
Keyword(in English) semiconductor quantum dot / p-doped / thermal stability
Paper # LQE2017-19
Date of Issue 2017-05-18 (LQE)

Conference Information
Committee LQE / LSJ
Conference Date 2017/5/25(2days)
Place (in Japanese) (See Japanese page)
Place (in English)
Topics (in Japanese) (See Japanese page)
Topics (in English)
Chair Susumu Noda(Kyoto Univ.)
Vice Chair Tsuyoshi Yamamoto(Fujitsu Labs.)
Secretary Tsuyoshi Yamamoto(NTT) / (Tohoku Univ.)
Assistant

Paper Information
Registration To Technical Committee on Lasers and Quantum Electronics / The Laser Society of Japan
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) Extreme Thermal Stability of 1550 nm Band Highly Stacked QD-LDs with p-Doped Structure
Sub Title (in English)
Keyword(1) semiconductor quantum dot
Keyword(2) p-doped
Keyword(3) thermal stability
1st Author's Name Atsushi Matsumoto
1st Author's Affiliation National Institute of Information and Communications Technology(NICT)
2nd Author's Name Kouichi Akahane
2nd Author's Affiliation National Institute of Information and Communications Technology(NICT)
3rd Author's Name Toshimasa Umezawa
3rd Author's Affiliation National Institute of Information and Communications Technology(NICT)
4th Author's Name Naokatsu Yamamoto
4th Author's Affiliation National Institute of Information and Communications Technology(NICT)
Date 2017-05-26
Paper # LQE2017-19
Volume (vol) vol.117
Number (no) LQE-61
Page pp.pp.79-84(LQE),
#Pages 6
Date of Issue 2017-05-18 (LQE)