| Presentation | 2017-04-20 A Study on Top-Gate Type OFETs utilizing Amorphous Rubrene Gate Insulator Shun-ichiro Ohmi, Mizuha Hiroki, Hongli Zhang, Yasutaka Maeda, |
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| PDF Download Page |  PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | High hole mobility, higher than that of amorphous-Si (a-Si), has been reported for the organic semiconductor field-effect transistor (OFET) utilizing pentacene, ruburene, and other materials. However, the device scaling and integration are the issues for the OFETs because of the difficulties to use lithography process. In this paper, we have investigated amorphous rubrene (a-rubrene) gate insulator, which is able to be evaporated, and in-situ deposition of a-rubrene/pentacene stack structure to fabricate top-gate type OFETs utilizing lithography process for the single organic semiconductor CMOS applications. Furthermore, fabrication of top-gate type ferroelectric gate OFET (FeFET) utilizing organic ferroelectrics of croconic acid thin films. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | amorphous rubrene / pentacene / croconic acid / top-gate type / lithography / OFET / FeFET / CMOS |
| Paper # | SDM2017-4,OME2017-4 |
| Date of Issue | 2017-04-13 (SDM, OME) |
| Conference Information | |
| Committee | OME / SDM |
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| Conference Date | 2017/4/20(2days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | Tatsugochou Shougaigakushuu Center |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | Organic molecular devices, silicon device, biotechnology, thin film device, novel material, evaluation method, etc |
| Chair | Naoki Matsuda(AIST) / Tatsuya Kunikiyo(Renesas) |
| Vice Chair | Tatsuo Mori(Aichi Inst. of Tech.) / Takahiro Shinada(Tohoku Univ.) |
| Secretary | Tatsuo Mori(NTT) / Takahiro Shinada(Univ. of Tokyo) |
| Assistant | Hirotake Kajii(Osaka Univ.) / Dai Taguchi(Tokyo Inst. of Tech.) / Hiroya Ikeda(Shizuoka Univ.) |
| Paper Information | |
| Registration To | Technical Committee on Organic Molecular Electronics / Technical Committee on Silicon Device and Materials |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | A Study on Top-Gate Type OFETs utilizing Amorphous Rubrene Gate Insulator |
| Sub Title (in English) | |
| Keyword(1) | amorphous rubrene |
| Keyword(2) | pentacene |
| Keyword(3) | croconic acid |
| Keyword(4) | top-gate type |
| Keyword(5) | lithography |
| Keyword(6) | OFET |
| Keyword(7) | FeFET |
| Keyword(8) | CMOS |
| 1st Author's Name | Shun-ichiro Ohmi |
| 1st Author's Affiliation | Tokyo Institute of Technoogy(Tokyo Tech) |
| 2nd Author's Name | Mizuha Hiroki |
| 2nd Author's Affiliation | Tokyo Institute of Technoogy(Tokyo Tech) |
| 3rd Author's Name | Hongli Zhang |
| 3rd Author's Affiliation | Tokyo Institute of Technoogy(Tokyo Tech) |
| 4th Author's Name | Yasutaka Maeda |
| 4th Author's Affiliation | Tokyo Institute of Technoogy(Tokyo Tech) |
| Date | 2017-04-20 |
| Paper # | SDM2017-4,OME2017-4 |
| Volume (vol) | vol.117 |
| Number (no) | SDM-7,OME-8 |
| Page | pp.pp.15-18(SDM), pp.15-18(OME), |
| #Pages | 4 |
| Date of Issue | 2017-04-13 (SDM, OME) |