| Presentation | 2017-04-20 Self-aligned four-terminal Cu-MIC poly-Ge TFTs fabricated at 300℃ on Glass Substare Hiroki Utsumi, Taisei Sasaki, Shunya Sekiguchi, Shoya Takeuchi, Akito Hara, |
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| PDF Download Page |  PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | Flexible devices and wearable devices are receiving more attention due to their contributions in realizing the Internet of Things and the Trillion Sensor Society. The fabrication of electronic systems and sensors on plastic substrates is necessary to realize the objectives of the society. In this paper, we demonstrate a four-terminal (4T) poly-Ge thin-film transistor fabricated at a temperature of 300 °C on a glass substrate. We used three key technologies: a self-aligned planar metal double-gate structure to reduce the off-current; metal induced crystallization using copper to fabricate the poly-Ge film at 300 °C; and aluminum induced lateral metallization source drain (Al-LM-SD) at 300 °C to achieve a low resistance metallic-like SD. The successful operations of the 4T structures was confirmed. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | TFT / Germanium / Ge / poly-Ge / MIC / Cu-MIC / four terminal / double gate |
| Paper # | SDM2017-1,OME2017-1 |
| Date of Issue | 2017-04-13 (SDM, OME) |
| Conference Information | |
| Committee | OME / SDM |
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| Conference Date | 2017/4/20(2days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | Tatsugochou Shougaigakushuu Center |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | Organic molecular devices, silicon device, biotechnology, thin film device, novel material, evaluation method, etc |
| Chair | Naoki Matsuda(AIST) / Tatsuya Kunikiyo(Renesas) |
| Vice Chair | Tatsuo Mori(Aichi Inst. of Tech.) / Takahiro Shinada(Tohoku Univ.) |
| Secretary | Tatsuo Mori(NTT) / Takahiro Shinada(Univ. of Tokyo) |
| Assistant | Hirotake Kajii(Osaka Univ.) / Dai Taguchi(Tokyo Inst. of Tech.) / Hiroya Ikeda(Shizuoka Univ.) |
| Paper Information | |
| Registration To | Technical Committee on Organic Molecular Electronics / Technical Committee on Silicon Device and Materials |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Self-aligned four-terminal Cu-MIC poly-Ge TFTs fabricated at 300℃ on Glass Substare |
| Sub Title (in English) | |
| Keyword(1) | TFT |
| Keyword(2) | Germanium |
| Keyword(3) | Ge |
| Keyword(4) | poly-Ge |
| Keyword(5) | MIC |
| Keyword(6) | Cu-MIC |
| Keyword(7) | four terminal |
| Keyword(8) | double gate |
| 1st Author's Name | Hiroki Utsumi |
| 1st Author's Affiliation | Tohoku Gakuin University(Tohoku Gakuin Univ.) |
| 2nd Author's Name | Taisei Sasaki |
| 2nd Author's Affiliation | Tohoku Gakuin University(Tohoku Gakuin Univ.) |
| 3rd Author's Name | Shunya Sekiguchi |
| 3rd Author's Affiliation | Tohoku Gakuin University(Tohoku Gakuin Univ.) |
| 4th Author's Name | Shoya Takeuchi |
| 4th Author's Affiliation | Tohoku Gakuin University(Tohoku Gakuin Univ.) |
| 5th Author's Name | Akito Hara |
| 5th Author's Affiliation | Tohoku Gakuin University(Tohoku Gakuin Univ.) |
| Date | 2017-04-20 |
| Paper # | SDM2017-1,OME2017-1 |
| Volume (vol) | vol.117 |
| Number (no) | SDM-7,OME-8 |
| Page | pp.pp.1-4(SDM), pp.1-4(OME), |
| #Pages | 4 |
| Date of Issue | 2017-04-13 (SDM, OME) |