Presentation | 2017-04-20 [Invited Lecture] TLC NAND Flash Memory Control Techniques to Reduce Errors of Read-Hot and Cold Data for Data Centers Toshiki Nakamura, Atsuro Kobayashi, Ken Takeuchi, |
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PDF Download Page | PDF download Page Link |
Abstract(in Japanese) | (See Japanese page) |
Abstract(in English) | In cloud data centers, NAND flash memory stores both read-hot and cold data. This paper describes that the threshold voltage distribution shifts are different between hot and cold data. In particular, threshold voltage distribution of hot data shifts complicatedly. In the conventional SSD, hot and cold data are mixed in the same NAND flash block. Thus, different read voltages cannot be applied. To solve this problem, this paper proposes SSD controller which allocates hot or cold data in hot or cold regions in TLC NAND flash. Then, apply optimal read voltages both hot and cold data. As a result, measured errors decrease by 85% and measured acceptable read cycles increase by 6.7-times. |
Keyword(in Japanese) | (See Japanese page) |
Keyword(in English) | NAND flash memory / data center / SSD / reliability |
Paper # | ICD2017-6 |
Date of Issue | 2017-04-13 (ICD) |
Conference Information | |
Committee | ICD |
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Conference Date | 2017/4/20(2days) |
Place (in Japanese) | (See Japanese page) |
Place (in English) | |
Topics (in Japanese) | (See Japanese page) |
Topics (in English) | |
Chair | Minoru Fujishima(Hiroshima Univ.) |
Vice Chair | Hideto Hidaka(Renesas) |
Secretary | Hideto Hidaka(Hiroshima Univ.) |
Assistant | Takashi Hashimoto(Panasonic) / Masanori Natsui(Tohoku Univ.) / Hiroyuki Ito(Tokyo Inst. of Tech.) / Pham Konkuha(Univ. of Electro-Comm.) |
Paper Information | |
Registration To | Technical Committee on Integrated Circuits and Devices |
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Language | JPN |
Title (in Japanese) | (See Japanese page) |
Sub Title (in Japanese) | (See Japanese page) |
Title (in English) | [Invited Lecture] TLC NAND Flash Memory Control Techniques to Reduce Errors of Read-Hot and Cold Data for Data Centers |
Sub Title (in English) | |
Keyword(1) | NAND flash memory |
Keyword(2) | data center |
Keyword(3) | SSD |
Keyword(4) | reliability |
1st Author's Name | Toshiki Nakamura |
1st Author's Affiliation | Chuo University(Chuo Univ.) |
2nd Author's Name | Atsuro Kobayashi |
2nd Author's Affiliation | Chuo University(Chuo Univ.) |
3rd Author's Name | Ken Takeuchi |
3rd Author's Affiliation | Chuo University(Chuo Univ.) |
Date | 2017-04-20 |
Paper # | ICD2017-6 |
Volume (vol) | vol.117 |
Number (no) | ICD-9 |
Page | pp.pp.29-34(ICD), |
#Pages | 6 |
Date of Issue | 2017-04-13 (ICD) |