| Presentation | 2017-04-21 [Invited Lecture] Demonstration of HfO2-Based Ferroelectric Tunnel Junction (FTJ) Marina Yamaguchi, Shosuke Fujii, Yuuichi Kamimuta, Tsunehiro Ino, Riichiro Takaishi, Yasushi Nakasaki, Masumi Saitoh, |
|---|---|
| PDF Download Page |  PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | In recent years, two remarkable progresses have been made on ferroelectric materials and devices. One is the demonstration of ferroelectric tunnel junction (FTJ) which can readout the polarization states non-destructively. Another progress is the discovery of ferroelectricity of HfO2, the most common high-k material in advanced CMOS devices. By combining these progresses, novel ferroelectric HfO2-based tunnel junction, HfO2 FTJ, is expected to be achieved. We established a solid guideline for performance improvement and demonstrated, for the first time, successful operation of the HfO2 FTJ. And we found that HfO2 FTJ has several characteristics superior to those of the other emerging memories. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | Ferroelectric Tunnel Junction / FTJ / HfO2 |
| Paper # | ICD2017-16 |
| Date of Issue | 2017-04-13 (ICD) |
| Conference Information | |
| Committee | ICD |
|---|---|
| Conference Date | 2017/4/20(2days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
| Chair | Minoru Fujishima(Hiroshima Univ.) |
| Vice Chair | Hideto Hidaka(Renesas) |
| Secretary | Hideto Hidaka(Hiroshima Univ.) |
| Assistant | Takashi Hashimoto(Panasonic) / Masanori Natsui(Tohoku Univ.) / Hiroyuki Ito(Tokyo Inst. of Tech.) / Pham Konkuha(Univ. of Electro-Comm.) |
| Paper Information | |
| Registration To | Technical Committee on Integrated Circuits and Devices |
|---|---|
| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | [Invited Lecture] Demonstration of HfO2-Based Ferroelectric Tunnel Junction (FTJ) |
| Sub Title (in English) | |
| Keyword(1) | Ferroelectric Tunnel Junction |
| Keyword(2) | FTJ |
| Keyword(3) | HfO2 |
| 1st Author's Name | Marina Yamaguchi |
| 1st Author's Affiliation | Toshiba Corporation(Toshiba) |
| 2nd Author's Name | Shosuke Fujii |
| 2nd Author's Affiliation | Toshiba Corporation(Toshiba) |
| 3rd Author's Name | Yuuichi Kamimuta |
| 3rd Author's Affiliation | Toshiba Corporation(Toshiba) |
| 4th Author's Name | Tsunehiro Ino |
| 4th Author's Affiliation | Toshiba Corporation(Toshiba) |
| 5th Author's Name | Riichiro Takaishi |
| 5th Author's Affiliation | Toshiba Corporation(Toshiba) |
| 6th Author's Name | Yasushi Nakasaki |
| 6th Author's Affiliation | Toshiba Corporation(Toshiba) |
| 7th Author's Name | Masumi Saitoh |
| 7th Author's Affiliation | Toshiba Corporation(Toshiba) |
| Date | 2017-04-21 |
| Paper # | ICD2017-16 |
| Volume (vol) | vol.117 |
| Number (no) | ICD-9 |
| Page | pp.pp.85-88(ICD), |
| #Pages | 4 |
| Date of Issue | 2017-04-13 (ICD) |