Presentation | 2017-04-20 [Invited Lecture] First demonstration of FinFET Split-Gate MONOS for High-Speed and Highly-Reliable Embedded Flash in 16/14nm-node and beyond Shibun Tsuda, Yoshiyuki Kawashima, Kenichiro Sonoda, Atsushi Yoshitomi, Tatsuyoshi Mihara, Shunichi Narumi, Masao Inoue, Seiji Muranaka, Takahiro Maruyama, Tomohiro Yamashita, Yasuo Yamaguchi, Digh Hisamoto, |
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PDF Download Page | PDF download Page Link |
Abstract(in Japanese) | (See Japanese page) |
Abstract(in English) | FinFET split-gate metal-oxide nitride oxide silicon (SG-MONOS) Flash memories have been fabricated and operated for the first time. Excellent subthreshold characteristics and small threshold-voltage variability owing to a Fin-structure are clarified. It is demonstrated that Fin top-corner effects are well suppressed by incremental step pulse programming for source side injection. Highly reliable data retention at 150 ºC after 250K program/erase cycles is confirmed for advanced automotive system applications. |
Keyword(in Japanese) | (See Japanese page) |
Keyword(in English) | embedded Flash memory / split gate cell / MONOS / FinFET |
Paper # | ICD2017-7 |
Date of Issue | 2017-04-13 (ICD) |
Conference Information | |
Committee | ICD |
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Conference Date | 2017/4/20(2days) |
Place (in Japanese) | (See Japanese page) |
Place (in English) | |
Topics (in Japanese) | (See Japanese page) |
Topics (in English) | |
Chair | Minoru Fujishima(Hiroshima Univ.) |
Vice Chair | Hideto Hidaka(Renesas) |
Secretary | Hideto Hidaka(Hiroshima Univ.) |
Assistant | Takashi Hashimoto(Panasonic) / Masanori Natsui(Tohoku Univ.) / Hiroyuki Ito(Tokyo Inst. of Tech.) / Pham Konkuha(Univ. of Electro-Comm.) |
Paper Information | |
Registration To | Technical Committee on Integrated Circuits and Devices |
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Language | JPN |
Title (in Japanese) | (See Japanese page) |
Sub Title (in Japanese) | (See Japanese page) |
Title (in English) | [Invited Lecture] First demonstration of FinFET Split-Gate MONOS for High-Speed and Highly-Reliable Embedded Flash in 16/14nm-node and beyond |
Sub Title (in English) | |
Keyword(1) | embedded Flash memory |
Keyword(2) | split gate cell |
Keyword(3) | MONOS |
Keyword(4) | FinFET |
1st Author's Name | Shibun Tsuda |
1st Author's Affiliation | Renesas Electronics Corporation(Renesas Electronics) |
2nd Author's Name | Yoshiyuki Kawashima |
2nd Author's Affiliation | Renesas Electronics Corporation(Renesas Electronics) |
3rd Author's Name | Kenichiro Sonoda |
3rd Author's Affiliation | Renesas Electronics Corporation(Renesas Electronics) |
4th Author's Name | Atsushi Yoshitomi |
4th Author's Affiliation | Renesas Electronics Corporation(Renesas Electronics) |
5th Author's Name | Tatsuyoshi Mihara |
5th Author's Affiliation | Renesas Electronics Corporation(Renesas Electronics) |
6th Author's Name | Shunichi Narumi |
6th Author's Affiliation | Renesas Electronics Corporation(Renesas Electronics) |
7th Author's Name | Masao Inoue |
7th Author's Affiliation | Renesas Electronics Corporation(Renesas Electronics) |
8th Author's Name | Seiji Muranaka |
8th Author's Affiliation | Renesas Electronics Corporation(Renesas Electronics) |
9th Author's Name | Takahiro Maruyama |
9th Author's Affiliation | Renesas Electronics Corporation(Renesas Electronics) |
10th Author's Name | Tomohiro Yamashita |
10th Author's Affiliation | Renesas Electronics Corporation(Renesas Electronics) |
11th Author's Name | Yasuo Yamaguchi |
11th Author's Affiliation | Renesas Electronics Corporation(Renesas Electronics) |
12th Author's Name | Digh Hisamoto |
12th Author's Affiliation | Hitachi, Ltd(Hitachi) |
Date | 2017-04-20 |
Paper # | ICD2017-7 |
Volume (vol) | vol.117 |
Number (no) | ICD-9 |
Page | pp.pp.35-38(ICD), |
#Pages | 4 |
Date of Issue | 2017-04-13 (ICD) |