Presentation 2017-03-03
Relationship of molten bridge and arcless commutation during current interruption of Hybrid DCCB
Yuta Yamada, Chen Mo, Kyotaro Nakayama, Tatsuya Hayakawa, Shungo Zen, Koichi Yasuoka,
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Abstract(in Japanese) (See Japanese page)
Abstract(in English) In recent years, with the increase in demand for DC power distribution, hybrid DC circuit breakers in which electrical contacts and semiconductor elements are connected in parallel have attracted attention. When SiC-MOSFET with low on-resistance is used as a semiconductor element, it is possible to realize arc-less interruption in which direct current is commutated from the contact to the semiconductor by the molten bridge voltage formed between the contacts when opening. In this paper, we investigate the commutation characteristics by varying the contact opening speed and the gap length, and investigate and discuss the stability of the molten bridge.
Keyword(in Japanese) (See Japanese page)
Keyword(in English) Hybrid DCCB / Molten bridge / SiC-MOSFET / arcless / gap length
Paper # EMD2016-103
Date of Issue 2017-02-24 (EMD)

Conference Information
Committee EMD
Conference Date 2017/3/3(1days)
Place (in Japanese) (See Japanese page)
Place (in English)
Topics (in Japanese) (See Japanese page)
Topics (in English)
Chair Yoshiteru Abe(NTT)
Vice Chair
Secretary (Sumitomo Denso)
Assistant Yoshiki Kayano(Univ. of Electro-Comm.) / Yuichi Hayashi(Tohoku Gakuin Univ.)

Paper Information
Registration To Technical Committee on Electromechanical Devices
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) Relationship of molten bridge and arcless commutation during current interruption of Hybrid DCCB
Sub Title (in English)
Keyword(1) Hybrid DCCB
Keyword(2) Molten bridge
Keyword(3) SiC-MOSFET
Keyword(4) arcless
Keyword(5) gap length
1st Author's Name Yuta Yamada
1st Author's Affiliation Tokyo Institute of Technology(Titech)
2nd Author's Name Chen Mo
2nd Author's Affiliation Tokyo Institute of Technology(Titech)
3rd Author's Name Kyotaro Nakayama
3rd Author's Affiliation Tokyo Institute of Technology(Titech)
4th Author's Name Tatsuya Hayakawa
4th Author's Affiliation Tokyo Institute of Technology(Titech)
5th Author's Name Shungo Zen
5th Author's Affiliation Tokyo Institute of Technology(Titech)
6th Author's Name Koichi Yasuoka
6th Author's Affiliation Tokyo Institute of Technology(Titech)
Date 2017-03-03
Paper # EMD2016-103
Volume (vol) vol.116
Number (no) EMD-492
Page pp.pp.17-20(EMD),
#Pages 4
Date of Issue 2017-02-24 (EMD)