Presentation 2017-02-24
Fabrication of Zinc Oxide-based Thin Films Transistors by a Solution Process and a Direct Patterning of Oxide Thin Films by a Thermal Nanoimprint Method
Fumiya Kimura, Alhanaki Abdullah, Yi Sun, Shota Sasaki, Koki Nagayama, Masatoshi Koyama, Toshihiko Maemoto, Shigehiko Sasa,
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Abstract(in Japanese) (See Japanese page)
Abstract(in English) Zinc oxide (ZnO) is transparent semiconductor material in visible light wavelength because it has band gap energy of 3.37 eV. ZnO is also one of the most attracted attention semiconductor material for the next generation display TFTs. ZnO films and its TFT applications have high adaptability to various fabrication processes. In this study, we report on fabrication and characterization of AZO multi-layer thin-film transistors using AZO thin film buffers by a solution method toward the development of high-performance TFT. On the other hand, nanoimprint lithography is attracting much interest from many industrial fields because it can provide various nanostructures. Imprinted pattern with an AZO gel thin film were obtained by a thermal nanoimprint method. These results also were reported in detail for the direct patterning by a thermal nanoimprint process.
Keyword(in Japanese) (See Japanese page)
Keyword(in English) Solution Method / Zinc Oxide / Thin Film Transistors / Nanoimprint Method
Paper # ED2016-132,SDM2016-149
Date of Issue 2017-02-17 (ED, SDM)

Conference Information
Committee ED / SDM
Conference Date 2017/2/24(1days)
Place (in Japanese) (See Japanese page)
Place (in English) Centennial Hall, Hokkaido Univ.
Topics (in Japanese) (See Japanese page)
Topics (in English) Functional nanodevices and related technologies
Chair Koichi Maezawa(Univ. of Toyama) / Tatsuya Kunikiyo(Renesas)
Vice Chair Kunio Tsuda(Toshiba) / Takahiro Shinada(Tohoku Univ.)
Secretary Kunio Tsuda(JAIST) / Takahiro Shinada(New JRC)
Assistant Masataka Higashiwaki(NICT) / Toshiyuki Oishi(Saga Univ.) / Hiroya Ikeda(Shizuoka Univ.)

Paper Information
Registration To Technical Committee on Electron Devices / Technical Committee on Silicon Device and Materials
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) Fabrication of Zinc Oxide-based Thin Films Transistors by a Solution Process and a Direct Patterning of Oxide Thin Films by a Thermal Nanoimprint Method
Sub Title (in English)
Keyword(1) Solution Method
Keyword(2) Zinc Oxide
Keyword(3) Thin Film Transistors
Keyword(4) Nanoimprint Method
1st Author's Name Fumiya Kimura
1st Author's Affiliation Osaka Institute of Technology(OIT)
2nd Author's Name Alhanaki Abdullah
2nd Author's Affiliation Osaka Institute of Technology(OIT)
3rd Author's Name Yi Sun
3rd Author's Affiliation Osaka Institute of Technology(OIT)
4th Author's Name Shota Sasaki
4th Author's Affiliation Osaka Institute of Technology(OIT)
5th Author's Name Koki Nagayama
5th Author's Affiliation Osaka Institute of Technology(OIT)
6th Author's Name Masatoshi Koyama
6th Author's Affiliation Osaka Institute of Technology(OIT)
7th Author's Name Toshihiko Maemoto
7th Author's Affiliation Osaka Institute of Technology(OIT)
8th Author's Name Shigehiko Sasa
8th Author's Affiliation Osaka Institute of Technology(OIT)
Date 2017-02-24
Paper # ED2016-132,SDM2016-149
Volume (vol) vol.116
Number (no) ED-471,SDM-472
Page pp.pp.13-16(ED), pp.13-16(SDM),
#Pages 4
Date of Issue 2017-02-17 (ED, SDM)