| Presentation | 2017-02-24 Reproduce and Prediction of Phonon in Group IV Binary Alloy Semiconductors by Lattice Dynamics Simulation Motohiro Tomita, Atsushi Ogura, Takanobu Watanabe, |
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| PDF Download Page |  PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | We have developed the interatomic potential of SiGe, GeSn, and SiSn binary mixed systems to reproduce the lattice constant, phonon frequency, and phonon dispersion relations in the bulk pure group IV crystal and group IV binary alloys by molecular dynamics (MD) simulation. The phonon dispersion relation is derived from the dynamical structure factor which is calculated by the space-time Fourier transform of atomic trajectories in MD simulation. The designed potential parameter set almost reproduces the experimental data of lattice constant and phonon frequency in Si, Ge, Sn, SiGe, GeSn, and SiSn. The Sn concentration dependence of the Ge-Sn, Si-Sn, and Sn-Sn mode phonon frequency, which are not yet clarified, is calculated with newly developed potential in GeSn and SiSn alloy. Furthermore, the TA phonon branches in the phonon dispersion relations were drastically broadened or split. The broadening or split of the acoustic phonon is related to the thermal characteristic. Thus, the phonon broadening or split can be controlled by difference of atomic potential or weight, the thermal characteristic also can be controlled. This work enables us to predict the elastic and phonon related properties of bulk group IV alloys. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | Group IV alloy / Phonon / Molecular dynamics method |
| Paper # | ED2016-141,SDM2016-158 |
| Date of Issue | 2017-02-17 (ED, SDM) |
| Conference Information | |
| Committee | ED / SDM |
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| Conference Date | 2017/2/24(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | Centennial Hall, Hokkaido Univ. |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | Functional nanodevices and related technologies |
| Chair | Koichi Maezawa(Univ. of Toyama) / Tatsuya Kunikiyo(Renesas) |
| Vice Chair | Kunio Tsuda(Toshiba) / Takahiro Shinada(Tohoku Univ.) |
| Secretary | Kunio Tsuda(JAIST) / Takahiro Shinada(New JRC) |
| Assistant | Masataka Higashiwaki(NICT) / Toshiyuki Oishi(Saga Univ.) / Hiroya Ikeda(Shizuoka Univ.) |
| Paper Information | |
| Registration To | Technical Committee on Electron Devices / Technical Committee on Silicon Device and Materials |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Reproduce and Prediction of Phonon in Group IV Binary Alloy Semiconductors by Lattice Dynamics Simulation |
| Sub Title (in English) | |
| Keyword(1) | Group IV alloy |
| Keyword(2) | Phonon |
| Keyword(3) | Molecular dynamics method |
| 1st Author's Name | Motohiro Tomita |
| 1st Author's Affiliation | Waseda University/Meiji University/Japan Society for the Promotion of Science(Waseda Univ./Meiji Univ./JSPS) |
| 2nd Author's Name | Atsushi Ogura |
| 2nd Author's Affiliation | Meiji University(Meiji Univ.) |
| 3rd Author's Name | Takanobu Watanabe |
| 3rd Author's Affiliation | Waseda University(Waseda Univ.) |
| Date | 2017-02-24 |
| Paper # | ED2016-141,SDM2016-158 |
| Volume (vol) | vol.116 |
| Number (no) | ED-471,SDM-472 |
| Page | pp.pp.61-66(ED), pp.61-66(SDM), |
| #Pages | 6 |
| Date of Issue | 2017-02-17 (ED, SDM) |