Presentation | 2017-01-30 [Invited Talk] First Demonstration of FinFET Split-Gate MONOS for High-Speed and Highly-Reliable Embedded Flash in 16/14nm-node and Beyond Shibun Tsuda, Yoshiyuki Kawashima, Kenichiro Sonoda, Atsushi Yoshitomi, Tatsuyoshi Mihara, Shunichi Narumi, Masao Inoue, Seiji Muranaka, Takahiro Maruyama, Tomohiro Yamashita, Yasuo Yamaguchi, Digh Hisamoto, |
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PDF Download Page | PDF download Page Link |
Abstract(in Japanese) | (See Japanese page) |
Abstract(in English) | FinFET split-gate metal-oxide nitride oxide silicon (SG-MONOS) Flash memories have been fabricated and operated for the first time. Excellent subthreshold characteristics and small threshold-voltage variability owing to a Fin-structure are clarified. It is demonstrated that Fin top-corner effects are well suppressed by incremental step pulse programming for source side injection. Highly reliable data retention at 150 ºC after 250K program/erase cycles is confirmed for advanced automotive system applications. |
Keyword(in Japanese) | (See Japanese page) |
Keyword(in English) | embedded Flash memory / split gate cell / MONOS / FinFET |
Paper # | SDM2016-134 |
Date of Issue | 2017-01-23 (SDM) |
Conference Information | |
Committee | SDM |
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Conference Date | 2017/1/30(1days) |
Place (in Japanese) | (See Japanese page) |
Place (in English) | Kikai-Shinko-Kaikan Bldg. |
Topics (in Japanese) | (See Japanese page) |
Topics (in English) | |
Chair | Tatsuya Kunikiyo(Renesas) |
Vice Chair | Takahiro Shinada(Tohoku Univ.) |
Secretary | Takahiro Shinada(Tohoku Univ.) |
Assistant | Hiroya Ikeda(Shizuoka Univ.) |
Paper Information | |
Registration To | Technical Committee on Silicon Device and Materials |
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Language | JPN |
Title (in Japanese) | (See Japanese page) |
Sub Title (in Japanese) | (See Japanese page) |
Title (in English) | [Invited Talk] First Demonstration of FinFET Split-Gate MONOS for High-Speed and Highly-Reliable Embedded Flash in 16/14nm-node and Beyond |
Sub Title (in English) | |
Keyword(1) | embedded Flash memory |
Keyword(2) | split gate cell |
Keyword(3) | MONOS |
Keyword(4) | FinFET |
1st Author's Name | Shibun Tsuda |
1st Author's Affiliation | Renesas Electronics Corporation(Renesas Electronics) |
2nd Author's Name | Yoshiyuki Kawashima |
2nd Author's Affiliation | Renesas Electronics Corporation(Renesas Electronics) |
3rd Author's Name | Kenichiro Sonoda |
3rd Author's Affiliation | Renesas Electronics Corporation(Renesas Electronics) |
4th Author's Name | Atsushi Yoshitomi |
4th Author's Affiliation | Renesas Electronics Corporation(Renesas Electronics) |
5th Author's Name | Tatsuyoshi Mihara |
5th Author's Affiliation | Renesas Electronics Corporation(Renesas Electronics) |
6th Author's Name | Shunichi Narumi |
6th Author's Affiliation | Renesas Electronics Corporation(Renesas Electronics) |
7th Author's Name | Masao Inoue |
7th Author's Affiliation | Renesas Electronics Corporation(Renesas Electronics) |
8th Author's Name | Seiji Muranaka |
8th Author's Affiliation | Renesas Electronics Corporation(Renesas Electronics) |
9th Author's Name | Takahiro Maruyama |
9th Author's Affiliation | Renesas Electronics Corporation(Renesas Electronics) |
10th Author's Name | Tomohiro Yamashita |
10th Author's Affiliation | Renesas Electronics Corporation(Renesas Electronics) |
11th Author's Name | Yasuo Yamaguchi |
11th Author's Affiliation | Renesas Electronics Corporation(Renesas Electronics) |
12th Author's Name | Digh Hisamoto |
12th Author's Affiliation | Hitachi, Ltd.(Hitachi) |
Date | 2017-01-30 |
Paper # | SDM2016-134 |
Volume (vol) | vol.116 |
Number (no) | SDM-448 |
Page | pp.pp.17-20(SDM), |
#Pages | 4 |
Date of Issue | 2017-01-23 (SDM) |