Presentation 2017-01-30
[Invited Talk] Demonstrating Performance Improvement of Complementary TFET Circuits by ION Enhancement Based on Isoelectronic Trap Technology
Takahiro Mori, Hidehiro Asai, Junichi Hattori, Koichi Fukuda, Shintaro Otsuka, Yukinori Morita, Shin-ichi O'uchi, Hiroshi Fuketa, Shinji Migita, Wataru Mizubayashi, Hiroyuki Ota, Takashi Matuskawa,
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Abstract(in Japanese) (See Japanese page)
Abstract(in English) We improved the performance of a complementary circuit comprising Si-based tunnel field-effect transistors (TFETs) by using isoelectronic trap (IET) technology. IET technology was found to increase the ON current (ION) 5 times in P-TFETs and 2 times in N-TFETs. The ION enhancement improved the inverter performance. In addition, ring oscillator (RO) circuit operation with the complementary TFET inverters was experimentally demonstrated for the first time. The RO circuit with IET-TFETs exhibited a higher operation frequency than that with conventional TFETs. IET technology provides a breakthrough towards realizing complementary circuits with Si-TFETs.
Keyword(in Japanese) (See Japanese page)
Keyword(in English) Tunnel Field-Effect Transistor / Isoelectronic Trap / Complementary Integrated Circuit
Paper # SDM2016-130
Date of Issue 2017-01-23 (SDM)

Conference Information
Committee SDM
Conference Date 2017/1/30(1days)
Place (in Japanese) (See Japanese page)
Place (in English) Kikai-Shinko-Kaikan Bldg.
Topics (in Japanese) (See Japanese page)
Topics (in English)
Chair Tatsuya Kunikiyo(Renesas)
Vice Chair Takahiro Shinada(Tohoku Univ.)
Secretary Takahiro Shinada(Tohoku Univ.)
Assistant Hiroya Ikeda(Shizuoka Univ.)

Paper Information
Registration To Technical Committee on Silicon Device and Materials
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) [Invited Talk] Demonstrating Performance Improvement of Complementary TFET Circuits by ION Enhancement Based on Isoelectronic Trap Technology
Sub Title (in English)
Keyword(1) Tunnel Field-Effect Transistor
Keyword(2) Isoelectronic Trap
Keyword(3) Complementary Integrated Circuit
1st Author's Name Takahiro Mori
1st Author's Affiliation National Institute of Advanced Industrial Science and Technology(ANational Institute of Advanced Industrial ScieIST)
2nd Author's Name Hidehiro Asai
2nd Author's Affiliation National Institute of Advanced Industrial Science and Technology(ANational Institute of Advanced Industrial ScieIST)
3rd Author's Name Junichi Hattori
3rd Author's Affiliation National Institute of Advanced Industrial Science and Technology(ANational Institute of Advanced Industrial ScieIST)
4th Author's Name Koichi Fukuda
4th Author's Affiliation National Institute of Advanced Industrial Science and Technology(ANational Institute of Advanced Industrial ScieIST)
5th Author's Name Shintaro Otsuka
5th Author's Affiliation National Institute of Advanced Industrial Science and Technology(ANational Institute of Advanced Industrial ScieIST)
6th Author's Name Yukinori Morita
6th Author's Affiliation National Institute of Advanced Industrial Science and Technology(ANational Institute of Advanced Industrial ScieIST)
7th Author's Name Shin-ichi O'uchi
7th Author's Affiliation National Institute of Advanced Industrial Science and Technology(ANational Institute of Advanced Industrial ScieIST)
8th Author's Name Hiroshi Fuketa
8th Author's Affiliation National Institute of Advanced Industrial Science and Technology(ANational Institute of Advanced Industrial ScieIST)
9th Author's Name Shinji Migita
9th Author's Affiliation National Institute of Advanced Industrial Science and Technology(ANational Institute of Advanced Industrial ScieIST)
10th Author's Name Wataru Mizubayashi
10th Author's Affiliation National Institute of Advanced Industrial Science and Technology(ANational Institute of Advanced Industrial ScieIST)
11th Author's Name Hiroyuki Ota
11th Author's Affiliation National Institute of Advanced Industrial Science and Technology(ANational Institute of Advanced Industrial ScieIST)
12th Author's Name Takashi Matuskawa
12th Author's Affiliation National Institute of Advanced Industrial Science and Technology(ANational Institute of Advanced Industrial ScieIST)
Date 2017-01-30
Paper # SDM2016-130
Volume (vol) vol.116
Number (no) SDM-448
Page pp.pp.1-4(SDM),
#Pages 4
Date of Issue 2017-01-23 (SDM)