| Presentation | 2017-02-24 Fabrication and evaluation of silicon triple quantum dots with a compact device structure Takafumi Uchida, Atsushi Tsurumaki-Fukuchi, Masashi Arita, Akira Fujiwara, Yasuo Takahashi, |
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| PDF Download Page |  PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | Silicon-based multiple quantum-dot with a scalable gate architecture is a promising candidate for quantum information processing. Here, we demonstrate a triple-quantum-dot (TQD) device fabricated by the pattern-dependent oxidation of a silicon nanowire and an additional oxidation of the nanowire through the gaps between three fine gate electrodes attached on the nanowire. This fabrication method is suitable for the integrated multiple quantum dot device because each quantum dot forms just under each fine gate. In addition, we propose and demonstrate a simultaneous gate-voltage sweeping method for a gate-capacitance evaluation of compact TQD devices with reduced gate distances. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | silicon single-electron device / triple quantum dot |
| Paper # | ED2016-130,SDM2016-147 |
| Date of Issue | 2017-02-17 (ED, SDM) |
| Conference Information | |
| Committee | ED / SDM |
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| Conference Date | 2017/2/24(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | Centennial Hall, Hokkaido Univ. |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | Functional nanodevices and related technologies |
| Chair | Koichi Maezawa(Univ. of Toyama) / Tatsuya Kunikiyo(Renesas) |
| Vice Chair | Kunio Tsuda(Toshiba) / Takahiro Shinada(Tohoku Univ.) |
| Secretary | Kunio Tsuda(JAIST) / Takahiro Shinada(New JRC) |
| Assistant | Masataka Higashiwaki(NICT) / Toshiyuki Oishi(Saga Univ.) / Hiroya Ikeda(Shizuoka Univ.) |
| Paper Information | |
| Registration To | Technical Committee on Electron Devices / Technical Committee on Silicon Device and Materials |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Fabrication and evaluation of silicon triple quantum dots with a compact device structure |
| Sub Title (in English) | |
| Keyword(1) | silicon single-electron device |
| Keyword(2) | triple quantum dot |
| 1st Author's Name | Takafumi Uchida |
| 1st Author's Affiliation | Graduate School of Information Science and Technology, Hokkaido University(IST. Hokkaido Univ.) |
| 2nd Author's Name | Atsushi Tsurumaki-Fukuchi |
| 2nd Author's Affiliation | Graduate School of Information Science and Technology, Hokkaido University(IST. Hokkaido Univ.) |
| 3rd Author's Name | Masashi Arita |
| 3rd Author's Affiliation | Graduate School of Information Science and Technology, Hokkaido University(IST. Hokkaido Univ.) |
| 4th Author's Name | Akira Fujiwara |
| 4th Author's Affiliation | NTT Basic Research Laboratories, NTT Corporation(NTT BRL) |
| 5th Author's Name | Yasuo Takahashi |
| 5th Author's Affiliation | Graduate School of Information Science and Technology, Hokkaido University(IST. Hokkaido Univ.) |
| Date | 2017-02-24 |
| Paper # | ED2016-130,SDM2016-147 |
| Volume (vol) | vol.116 |
| Number (no) | ED-471,SDM-472 |
| Page | pp.pp.1-6(ED), pp.1-6(SDM), |
| #Pages | 6 |
| Date of Issue | 2017-02-17 (ED, SDM) |