Presentation | 2017-02-24 Time-domain charge pumping on silicon-on-insulator metal-oxide-semiconductor devices Tokinobu Watanabe, Hori Masahiro, Ono Yukinori, |
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PDF Download Page | PDF download Page Link |
Abstract(in Japanese) | (See Japanese page) |
Abstract(in English) | Time-domain charge pumping, which monitors transient currents during the charge pumping process, was applied to silicon-on-insulator (SOI) MOS gated p–i–n diodes. We found that the transient electron current is strongly dependent on the polarity of the back (substrate) gate. Specifically, when the back gate is positively biased, the current peak caused by the electron trap to the interface defects was found to disappear (or significantly weaken), which was attributed to the charging effects of the trapped electrons. The present results reveal the importance of the formation of the back channel and provide important information for further detailed analysis of the charge pumping process in SOI MOS devices. |
Keyword(in Japanese) | (See Japanese page) |
Keyword(in English) | charge pumping / time-domain / interface defects / SOI |
Paper # | ED2016-131,SDM2016-148 |
Date of Issue | 2017-02-17 (ED, SDM) |
Conference Information | |
Committee | ED / SDM |
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Conference Date | 2017/2/24(1days) |
Place (in Japanese) | (See Japanese page) |
Place (in English) | Centennial Hall, Hokkaido Univ. |
Topics (in Japanese) | (See Japanese page) |
Topics (in English) | Functional nanodevices and related technologies |
Chair | Koichi Maezawa(Univ. of Toyama) / Tatsuya Kunikiyo(Renesas) |
Vice Chair | Kunio Tsuda(Toshiba) / Takahiro Shinada(Tohoku Univ.) |
Secretary | Kunio Tsuda(JAIST) / Takahiro Shinada(New JRC) |
Assistant | Masataka Higashiwaki(NICT) / Toshiyuki Oishi(Saga Univ.) / Hiroya Ikeda(Shizuoka Univ.) |
Paper Information | |
Registration To | Technical Committee on Electron Devices / Technical Committee on Silicon Device and Materials |
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Language | JPN |
Title (in Japanese) | (See Japanese page) |
Sub Title (in Japanese) | (See Japanese page) |
Title (in English) | Time-domain charge pumping on silicon-on-insulator metal-oxide-semiconductor devices |
Sub Title (in English) | |
Keyword(1) | charge pumping |
Keyword(2) | time-domain |
Keyword(3) | interface defects |
Keyword(4) | SOI |
1st Author's Name | Tokinobu Watanabe |
1st Author's Affiliation | Shizuoka University/University of Toyama(Shizuoka Univ./Univ. Toyama) |
2nd Author's Name | Hori Masahiro |
2nd Author's Affiliation | Shizuoka University(Shizuoka Univ.) |
3rd Author's Name | Ono Yukinori |
3rd Author's Affiliation | Shizuoka University(Shizuoka Univ.) |
Date | 2017-02-24 |
Paper # | ED2016-131,SDM2016-148 |
Volume (vol) | vol.116 |
Number (no) | ED-471,SDM-472 |
Page | pp.pp.7-12(ED), pp.7-12(SDM), |
#Pages | 6 |
Date of Issue | 2017-02-17 (ED, SDM) |