Presentation 2017-02-24
Time-domain charge pumping on silicon-on-insulator metal-oxide-semiconductor devices
Tokinobu Watanabe, Hori Masahiro, Ono Yukinori,
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Abstract(in Japanese) (See Japanese page)
Abstract(in English) Time-domain charge pumping, which monitors transient currents during the charge pumping process, was applied to silicon-on-insulator (SOI) MOS gated p–i–n diodes. We found that the transient electron current is strongly dependent on the polarity of the back (substrate) gate. Specifically, when the back gate is positively biased, the current peak caused by the electron trap to the interface defects was found to disappear (or significantly weaken), which was attributed to the charging effects of the trapped electrons. The present results reveal the importance of the formation of the back channel and provide important information for further detailed analysis of the charge pumping process in SOI MOS devices.
Keyword(in Japanese) (See Japanese page)
Keyword(in English) charge pumping / time-domain / interface defects / SOI
Paper # ED2016-131,SDM2016-148
Date of Issue 2017-02-17 (ED, SDM)

Conference Information
Committee ED / SDM
Conference Date 2017/2/24(1days)
Place (in Japanese) (See Japanese page)
Place (in English) Centennial Hall, Hokkaido Univ.
Topics (in Japanese) (See Japanese page)
Topics (in English) Functional nanodevices and related technologies
Chair Koichi Maezawa(Univ. of Toyama) / Tatsuya Kunikiyo(Renesas)
Vice Chair Kunio Tsuda(Toshiba) / Takahiro Shinada(Tohoku Univ.)
Secretary Kunio Tsuda(JAIST) / Takahiro Shinada(New JRC)
Assistant Masataka Higashiwaki(NICT) / Toshiyuki Oishi(Saga Univ.) / Hiroya Ikeda(Shizuoka Univ.)

Paper Information
Registration To Technical Committee on Electron Devices / Technical Committee on Silicon Device and Materials
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) Time-domain charge pumping on silicon-on-insulator metal-oxide-semiconductor devices
Sub Title (in English)
Keyword(1) charge pumping
Keyword(2) time-domain
Keyword(3) interface defects
Keyword(4) SOI
1st Author's Name Tokinobu Watanabe
1st Author's Affiliation Shizuoka University/University of Toyama(Shizuoka Univ./Univ. Toyama)
2nd Author's Name Hori Masahiro
2nd Author's Affiliation Shizuoka University(Shizuoka Univ.)
3rd Author's Name Ono Yukinori
3rd Author's Affiliation Shizuoka University(Shizuoka Univ.)
Date 2017-02-24
Paper # ED2016-131,SDM2016-148
Volume (vol) vol.116
Number (no) ED-471,SDM-472
Page pp.pp.7-12(ED), pp.7-12(SDM),
#Pages 6
Date of Issue 2017-02-17 (ED, SDM)