| Presentation | 2017-02-06 [Invited Talk] Direct Cu metallization on TGV Glass substrate using Wet Process. Kotoku Inoue, Masatoshi Takayama, Tsubasa Fujimura, Shigeo Onitake, |
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| PDF Download Page |  PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | It is believed that conformal metallization or via filling on glass with the highly conductive thick Cu material is expected to enhance the performance for RF electronic devices in the IoT era due to the outstanding RF properties of the glass and high-Q nature of Cu metallization. Previously, metallization on the glass with sputtering and printing technology has been demonstrated. However, there are some concerns in terms of throughput and mechanical integrity of sputter seed layer for Cu metallization on TGV (thru-glass via) sidewalls and the smooth glass surfaces. This study reports our novel metallization technology to obtain good adhesion without degrading the RF performance associated with glass properties and Cu conductivity. Metal circuits including high-Q RF inductors were created without roughening the surface of glass substrate by wet plating process with subtractive process. Surface cleaning is critical to obtain good adhesion. In this experiment, glass surface was cleaned by the irradiation of UV light and alkaline degreasing with complex agent. UV light and alkaline degreasing make the surface of the glass clean and the Cu adhesion to glass improve with minimal stress to the glass itself. We have successfully demonstrated direct cupper plating on TGV holes with filling via and conformal plating for RF front end filters with better performance (Cu – glass adhesion 0.4kN/m). This technology is further optimized for high-performance RF standalone passive network and RF interposers with the capability of thick (15um) Cu plating directly on TGV glass for the first time in 300mm x 400mm x 0.4mm thick panel format, targeting low-cost and high-throughput TGV metallization. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | Glass / Cu plating / Through glass via hole / TGV / Direct Cu plating on glass |
| Paper # | SDM2016-146 |
| Date of Issue | 2017-01-30 (SDM) |
| Conference Information | |
| Committee | SDM |
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| Conference Date | 2017/2/6(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | Tokyo Univ. |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | Interconnects, Package and related materials |
| Chair | Tatsuya Kunikiyo(Renesas) |
| Vice Chair | Takahiro Shinada(Tohoku Univ.) |
| Secretary | Takahiro Shinada(Tohoku Univ.) |
| Assistant | Hiroya Ikeda(Shizuoka Univ.) |
| Paper Information | |
| Registration To | Technical Committee on Silicon Device and Materials |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | [Invited Talk] Direct Cu metallization on TGV Glass substrate using Wet Process. |
| Sub Title (in English) | |
| Keyword(1) | Glass |
| Keyword(2) | Cu plating |
| Keyword(3) | Through glass via hole |
| Keyword(4) | TGV |
| Keyword(5) | Direct Cu plating on glass |
| 1st Author's Name | Kotoku Inoue |
| 1st Author's Affiliation | Koto electric co.,Ltd.(Koto) |
| 2nd Author's Name | Masatoshi Takayama |
| 2nd Author's Affiliation | Koto electric co.,Ltd.(Koto) |
| 3rd Author's Name | Tsubasa Fujimura |
| 3rd Author's Affiliation | Koto electric co.,Ltd.(Koto) |
| 4th Author's Name | Shigeo Onitake |
| 4th Author's Affiliation | Koto electric co.,Ltd.(Koto) |
| Date | 2017-02-06 |
| Paper # | SDM2016-146 |
| Volume (vol) | vol.116 |
| Number (no) | SDM-450 |
| Page | pp.pp.41-44(SDM), |
| #Pages | 4 |
| Date of Issue | 2017-01-30 (SDM) |