| Presentation | 2017-01-26 [Invited Lecture] GaN Power Transistors on Si Substrates for Switching and High-Frequency Applications Tetsuzo Ueda, Yasuhiro Uemoto, Hiroyuki Sakai, Tsuyoshi Tanaka, Daisuke Ueda, |
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| PDF Download Page |  PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | GaN transistors have been widely investigated for power deices to be used in various power switching systems. In addition, high-frequency power amplifiers employing GaN transistors are commercially available for cellular base-station applications. Panasonic has been developing GaN transistors taking advantages of its proprietary technologies on the epitaxial growth of GaN on large diameter Si substrates. In this paper, state-of-the-art GaN transistors on Si developed by Panasonic aiming at both switching and high frequency applications are summarized. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | GaN transistor / Si substrate / Switching power device / High frequency power amplifier |
| Paper # | ED2016-96,MW2016-172 |
| Date of Issue | 2017-01-19 (ED, MW) |
| Conference Information | |
| Committee | MW / ED |
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| Conference Date | 2017/1/26(2days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | Kikai-Shinko-Kaikan Bldg. |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | Compound Semiconductor IC and High-Speed, High-Frequency Devices / Microwave Technologies |
| Chair | Yohei Ishikawa(Kyoto Univ.) / Koichi Maezawa(Univ. of Toyama) |
| Vice Chair | Takao Kuki(Kokushikan Univ.) / Kenjiro Nishikawa(Kagoshima Univ.) / Kenichi Tajima(Mitsubishi Electric) / Kunio Tsuda(Toshiba) |
| Secretary | Takao Kuki(Panasonic) / Kenjiro Nishikawa(Tokyo Inst. of Tech.) / Kenichi Tajima(JAIST) / Kunio Tsuda(New JRC) |
| Assistant | Naoto Sekiya(Univ. of Yamanashi) / Satoshi Ono(Univ. of Electro-Comm.) / Masataka Higashiwaki(NICT) / Toshiyuki Oishi(Saga Univ.) |
| Paper Information | |
| Registration To | Technical Committee on Microwaves / Technical Committee on Electron Devices |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | [Invited Lecture] GaN Power Transistors on Si Substrates for Switching and High-Frequency Applications |
| Sub Title (in English) | * |
| Keyword(1) | GaN transistor |
| Keyword(2) | Si substrate |
| Keyword(3) | Switching power device |
| Keyword(4) | High frequency power amplifier |
| 1st Author's Name | Tetsuzo Ueda |
| 1st Author's Affiliation | Panasonic(Panasonic) |
| 2nd Author's Name | Yasuhiro Uemoto |
| 2nd Author's Affiliation | Panasonic(Panasonic) |
| 3rd Author's Name | Hiroyuki Sakai |
| 3rd Author's Affiliation | Panasonic(Panasonic) |
| 4th Author's Name | Tsuyoshi Tanaka |
| 4th Author's Affiliation | Panasonic(Panasonic) |
| 5th Author's Name | Daisuke Ueda |
| 5th Author's Affiliation | Kyoto Insutitute of Technorogy(Kyoto Insutitute of Tech.) |
| Date | 2017-01-26 |
| Paper # | ED2016-96,MW2016-172 |
| Volume (vol) | vol.116 |
| Number (no) | ED-431,MW-432 |
| Page | pp.pp.1-5(ED), pp.1-5(MW), |
| #Pages | 5 |
| Date of Issue | 2017-01-19 (ED, MW) |