| Presentation | 2017-01-26 [Invited Lecture] Current status and problems of epitaxial wafers for GaN electronic devices Yohei Otoki, |
|---|---|
| PDF Download Page |  PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | GaN electronic devices have been in the practical stage mainly for high frequency applications. In epitaxial growth, the tolerance range of growth conditions is narrower than that of GaAs, and then very precise control is necessary. In addition, since there are point defects which become traps in the crystal, it is very important to know and control them. Recently, improvements of device performance such as Schottky characteristics, linearity, high breakdown voltage, by using a high quality GaN substrate have been reported. Use of the substrate is expected in the near future |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | GaN / epitaxial growth / HEMT / Eletronic Devices / MOCVD / GaN substrate / Device performance |
| Paper # | ED2016-100,MW2016-176 |
| Date of Issue | 2017-01-19 (ED, MW) |
| Conference Information | |
| Committee | MW / ED |
|---|---|
| Conference Date | 2017/1/26(2days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | Kikai-Shinko-Kaikan Bldg. |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | Compound Semiconductor IC and High-Speed, High-Frequency Devices / Microwave Technologies |
| Chair | Yohei Ishikawa(Kyoto Univ.) / Koichi Maezawa(Univ. of Toyama) |
| Vice Chair | Takao Kuki(Kokushikan Univ.) / Kenjiro Nishikawa(Kagoshima Univ.) / Kenichi Tajima(Mitsubishi Electric) / Kunio Tsuda(Toshiba) |
| Secretary | Takao Kuki(Panasonic) / Kenjiro Nishikawa(Tokyo Inst. of Tech.) / Kenichi Tajima(JAIST) / Kunio Tsuda(New JRC) |
| Assistant | Naoto Sekiya(Univ. of Yamanashi) / Satoshi Ono(Univ. of Electro-Comm.) / Masataka Higashiwaki(NICT) / Toshiyuki Oishi(Saga Univ.) |
| Paper Information | |
| Registration To | Technical Committee on Microwaves / Technical Committee on Electron Devices |
|---|---|
| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | [Invited Lecture] Current status and problems of epitaxial wafers for GaN electronic devices |
| Sub Title (in English) | |
| Keyword(1) | GaN |
| Keyword(2) | epitaxial growth |
| Keyword(3) | HEMT |
| Keyword(4) | Eletronic Devices |
| Keyword(5) | MOCVD |
| Keyword(6) | GaN substrate |
| Keyword(7) | Device performance |
| 1st Author's Name | Yohei Otoki |
| 1st Author's Affiliation | SCIOCS(SCIOCS) |
| Date | 2017-01-26 |
| Paper # | ED2016-100,MW2016-176 |
| Volume (vol) | vol.116 |
| Number (no) | ED-431,MW-432 |
| Page | pp.pp.19-22(ED), pp.19-22(MW), |
| #Pages | 4 |
| Date of Issue | 2017-01-19 (ED, MW) |