| Presentation | 2017-01-26 [Invited Lecture] Characterization of Metal/GaN Schottky Contacts Kenji Shiojima, |
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| PDF Download Page |  PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | We report our experimental results on GaN Schottky contacts in conjunction with a review of the development of GaN electron devices. We describe (i) thermal stability, (ii) correlation between dislocations and electrical characteristics (iii) current transport mechanism of p-GaN contacts, (iv) cleaved m-plane n-GaN Schottky contacts, and (v) mapping of the interfaces using scanning internal photoemission microscopy. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | GaN / Schottky contact / Schottky barrier height / Current transport mechanism |
| Paper # | ED2016-101,MW2016-177 |
| Date of Issue | 2017-01-19 (ED, MW) |
| Conference Information | |
| Committee | MW / ED |
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| Conference Date | 2017/1/26(2days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | Kikai-Shinko-Kaikan Bldg. |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | Compound Semiconductor IC and High-Speed, High-Frequency Devices / Microwave Technologies |
| Chair | Yohei Ishikawa(Kyoto Univ.) / Koichi Maezawa(Univ. of Toyama) |
| Vice Chair | Takao Kuki(Kokushikan Univ.) / Kenjiro Nishikawa(Kagoshima Univ.) / Kenichi Tajima(Mitsubishi Electric) / Kunio Tsuda(Toshiba) |
| Secretary | Takao Kuki(Panasonic) / Kenjiro Nishikawa(Tokyo Inst. of Tech.) / Kenichi Tajima(JAIST) / Kunio Tsuda(New JRC) |
| Assistant | Naoto Sekiya(Univ. of Yamanashi) / Satoshi Ono(Univ. of Electro-Comm.) / Masataka Higashiwaki(NICT) / Toshiyuki Oishi(Saga Univ.) |
| Paper Information | |
| Registration To | Technical Committee on Microwaves / Technical Committee on Electron Devices |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | [Invited Lecture] Characterization of Metal/GaN Schottky Contacts |
| Sub Title (in English) | Review from the Early Days |
| Keyword(1) | GaN |
| Keyword(2) | Schottky contact |
| Keyword(3) | Schottky barrier height |
| Keyword(4) | Current transport mechanism |
| 1st Author's Name | Kenji Shiojima |
| 1st Author's Affiliation | University of Fukuiv(Univ. of Fukui) |
| Date | 2017-01-26 |
| Paper # | ED2016-101,MW2016-177 |
| Volume (vol) | vol.116 |
| Number (no) | ED-431,MW-432 |
| Page | pp.pp.23-28(ED), pp.23-28(MW), |
| #Pages | 6 |
| Date of Issue | 2017-01-19 (ED, MW) |