| Presentation | 2017-01-31 A 5.92-Mb/mm2 28-nm Pseudo 2-Read/Write Dual-Port SRAM Using Double Pumping Circuitry Yuichiro Ishii, Makoto Yabuuchi, Yohei Sawada, Masao Morimoto, Yasumasa Tsukamoto, Yuta Yoshida, Ken Shibata, Toshiaki Sano, Shinji Tanaka, Koji Nii, |
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| PDF Download Page |  PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | We propose pseudo dual-port (DP) SRAM by using 6T single-port (SP) SRAM bitcell with double pumping circuitry, which enables 2-read/write (2RW) operation within a clock cycle. We designed and implemented a 512-kb pseudo DP SRAM macro based on 28-nm low-power bulk CMOS technology. Our design achieved the bit density of 5.92 Mb/mm2, which is the highest ever reported. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | Pseudo / DP / 2RW / SRAM / 28nm / Double pumping |
| Paper # | EMD2016-86,MR2016-58,SCE2016-64,EID2016-65,ED2016-129,CPM2016-130,SDM2016-129,ICD2016-117,OME2016-98 |
| Date of Issue | 2017-01-23 (EMD, MR, SCE, EID, ED, CPM, SDM, ICD, OME) |
| Conference Information | |
| Committee | ICD / CPM / ED / EID / EMD / MR / OME / SCE / SDM |
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| Conference Date | 2017/1/30(2days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | Miyajima-Morino-Yado(Hiroshima) |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | Circuit, Device and Engineering Science |
| Chair | Minoru Fujishima(Hiroshima Univ.) / Satoru Noge(Numazu National College of Tech.) / Koichi Maezawa(Univ. of Toyama) / Tomokazu Shiga(Univ. of Electro-Comm.) / Yoshiteru Abe(NTT) / Yoshihiro Okamoto(Ehime Univ.) / Naoki Matsuda(AIST) / Nobuyuki Yoshikawa(Yokohama National Univ.) / Tatsuya Kunikiyo(Renesas) |
| Vice Chair | Hideto Hidaka(Renesas) / Fumihiko Hirose(Yamagata Univ.) / Kunio Tsuda(Toshiba) / Mutsumi Kimura(Ryukoku Univ.) / Yuko Kominami(Shizuoka Univ.) / / / Tatsuo Mori(Aichi Inst. of Tech.) / / Takahiro Shinada(Tohoku Univ.) |
| Secretary | Hideto Hidaka(Hiroshima Univ.) / Fumihiko Hirose(Univ. of Tokyo) / Kunio Tsuda(NTT) / Mutsumi Kimura(Nihon Univ.) / Yuko Kominami(JAIST) / (New JRC) / (NTT) / Tatsuo Mori(Tokyo Inst. of Tech.) / (Sumitomo Denso) / Takahiro Shinada(Fujielectric) |
| Assistant | Takashi Hashimoto(Panasonic) / Masanori Natsui(Tohoku Univ.) / Hiroyuki Ito(Tokyo Inst. of Tech.) / Pham Konkuha(Univ. of Electro-Comm.) / Takashi Sakamoto(NTT) / Yuichi Nakamura(Toyohashi Univ. of Tech.) / Masataka Higashiwaki(NICT) / Toshiyuki Oishi(Saga Univ.) / Rumiko Yamaguchi(Akita Univ.) / Hiroyuki Nitta(Japan Display) / Mitsuru Nakata(NHK) / Takashi Kojiri(ZEON) / Ryosuke Nonaka(Toshiba) / Yoshiki Kayano(Univ. of Electro-Comm.) / Yuichi Hayashi(Tohoku Gakuin Univ.) / Kiwamu Kudo(Toshiba) / Shuhei Yoshida(Kinki Univ.) / Hirotake Kajii(Osaka Univ.) / Dai Taguchi(Tokyo Inst. of Tech.) / Hiroyuki Akaike(Nagoya Univ.) / Yuki Yamanashi(Yokohama National Univ.) / Hiroya Ikeda(Shizuoka Univ.) |
| Paper Information | |
| Registration To | Technical Committee on Integrated Circuits and Devices / Technical Committee on Component Parts and Materials / Technical Committee on Electron Devices / Technical Committee on Electronic Information Displays / Technical Committee on Electromechanical Devices / Technical Committee on Magnetic Recording / Technical Committee on Organic Molecular Electronics / Technical Committee on Superconductive Electronics / Technical Committee on Silicon Device and Materials |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | A 5.92-Mb/mm2 28-nm Pseudo 2-Read/Write Dual-Port SRAM Using Double Pumping Circuitry |
| Sub Title (in English) | |
| Keyword(1) | Pseudo |
| Keyword(2) | DP |
| Keyword(3) | 2RW |
| Keyword(4) | SRAM |
| Keyword(5) | 28nm |
| Keyword(6) | Double pumping |
| 1st Author's Name | Yuichiro Ishii |
| 1st Author's Affiliation | Renesas Electronics Corporation(Renesas Electronics) |
| 2nd Author's Name | Makoto Yabuuchi |
| 2nd Author's Affiliation | Renesas Electronics Corporation(Renesas Electronics) |
| 3rd Author's Name | Yohei Sawada |
| 3rd Author's Affiliation | Renesas Electronics Corporation(Renesas Electronics) |
| 4th Author's Name | Masao Morimoto |
| 4th Author's Affiliation | Renesas Electronics Corporation(Renesas Electronics) |
| 5th Author's Name | Yasumasa Tsukamoto |
| 5th Author's Affiliation | Renesas Electronics Corporation(Renesas Electronics) |
| 6th Author's Name | Yuta Yoshida |
| 6th Author's Affiliation | Renesas System Design Co., Ltd.(Renesas System Design) |
| 7th Author's Name | Ken Shibata |
| 7th Author's Affiliation | Renesas System Design Co., Ltd.(Renesas System Design) |
| 8th Author's Name | Toshiaki Sano |
| 8th Author's Affiliation | Renesas System Design Co., Ltd.(Renesas System Design) |
| 9th Author's Name | Shinji Tanaka |
| 9th Author's Affiliation | Renesas Electronics Corporation(Renesas Electronics) |
| 10th Author's Name | Koji Nii |
| 10th Author's Affiliation | Renesas Electronics Corporation(Renesas Electronics) |
| Date | 2017-01-31 |
| Paper # | EMD2016-86,MR2016-58,SCE2016-64,EID2016-65,ED2016-129,CPM2016-130,SDM2016-129,ICD2016-117,OME2016-98 |
| Volume (vol) | vol.116 |
| Number (no) | EMD-439,MR-440,SCE-441,EID-442,ED-443,CPM-444,SDM-445,ICD-446,OME-447 |
| Page | pp.pp.87-92(EMD), pp.87-92(MR), pp.87-92(SCE), pp.87-92(EID), pp.87-92(ED), pp.87-92(CPM), pp.87-92(SDM), pp.87-92(ICD), pp.87-92(OME), |
| #Pages | 6 |
| Date of Issue | 2017-01-23 (EMD, MR, SCE, EID, ED, CPM, SDM, ICD, OME) |