| Presentation | 2017-01-27 Dependence of Electron Mobility on Deposition Temperature and H2 Annealing in MOSFETs with HfO2/Al2O3/InGaAs Gate Stacks Kazuto Ohsawa, Shinji Noguchi, Seiko Netsu, Nobukazu Kise, Yasuyuki Miyamoto, |
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| PDF Download Page |  PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | III–V compound semiconductors are promising materials for future n-type MOSFET channels because of their high electron mobility. To realize high-performance MOSFETs, the MOSFETs should have low trap densities and high electron mobility. In this study, the mobilities and interface state densities of the MOSFETs with the Al2O3/InGaAs and HfO2/Al2O3/InGaAs gate stacks were extracted after nitrogen plasma/TMA cleaning. The deposition at 120 °C improved the mobility of MOSFETs with HfO2/2-cycle Al2O3/InGaAs gate stacks by twice to that at the deposition at 300 °C, although the dependence of mobility on the deposition temperature in Al2O3/InGaAs gate stacks was weak. The deposition at 120 °C also improved interface state densities. H2 annealing improved or degraded the electron mobilities depending on gate stacks. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | Mobility / Interface state density / InGaAs / HfO2 / Al2O3 |
| Paper # | ED2016-103,MW2016-179 |
| Date of Issue | 2017-01-19 (ED, MW) |
| Conference Information | |
| Committee | MW / ED |
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| Conference Date | 2017/1/26(2days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | Kikai-Shinko-Kaikan Bldg. |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | Compound Semiconductor IC and High-Speed, High-Frequency Devices / Microwave Technologies |
| Chair | Yohei Ishikawa(Kyoto Univ.) / Koichi Maezawa(Univ. of Toyama) |
| Vice Chair | Takao Kuki(Kokushikan Univ.) / Kenjiro Nishikawa(Kagoshima Univ.) / Kenichi Tajima(Mitsubishi Electric) / Kunio Tsuda(Toshiba) |
| Secretary | Takao Kuki(Panasonic) / Kenjiro Nishikawa(Tokyo Inst. of Tech.) / Kenichi Tajima(JAIST) / Kunio Tsuda(New JRC) |
| Assistant | Naoto Sekiya(Univ. of Yamanashi) / Satoshi Ono(Univ. of Electro-Comm.) / Masataka Higashiwaki(NICT) / Toshiyuki Oishi(Saga Univ.) |
| Paper Information | |
| Registration To | Technical Committee on Microwaves / Technical Committee on Electron Devices |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Dependence of Electron Mobility on Deposition Temperature and H2 Annealing in MOSFETs with HfO2/Al2O3/InGaAs Gate Stacks |
| Sub Title (in English) | |
| Keyword(1) | Mobility |
| Keyword(2) | Interface state density |
| Keyword(3) | InGaAs |
| Keyword(4) | HfO2 |
| Keyword(5) | Al2O3 |
| 1st Author's Name | Kazuto Ohsawa |
| 1st Author's Affiliation | Tokyo Institute of Technology(Tokyo Tech) |
| 2nd Author's Name | Shinji Noguchi |
| 2nd Author's Affiliation | Tokyo Institute of Technology(Tokyo Tech) |
| 3rd Author's Name | Seiko Netsu |
| 3rd Author's Affiliation | Tokyo Institute of Technology(Tokyo Tech) |
| 4th Author's Name | Nobukazu Kise |
| 4th Author's Affiliation | Tokyo Institute of Technology(Tokyo Tech) |
| 5th Author's Name | Yasuyuki Miyamoto |
| 5th Author's Affiliation | Tokyo Institute of Technology(Tokyo Tech) |
| Date | 2017-01-27 |
| Paper # | ED2016-103,MW2016-179 |
| Volume (vol) | vol.116 |
| Number (no) | ED-431,MW-432 |
| Page | pp.pp.35-40(ED), pp.35-40(MW), |
| #Pages | 6 |
| Date of Issue | 2017-01-19 (ED, MW) |