| Presentation | 2017-01-27 Improvement in Noise Characteristics of Zero-bias GaAsSb-based Backward Diodes Tsuyoshi Takahashi, Masaru Sato, Shoichi Shiba, Yasuhiro Nakasha, Naoki Hara, Taisuke Iwai, Naoya Okamoto, Keiji Watanabe, |
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| PDF Download Page |  PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | Noise characteristics of zero-bias backward diodes for terahertz detectors were improved by using a p+-GaAs0.51Sb0.49/n-In0.53Ga0.47As heterojunction structure. Junction resistance was successfully decreased by removing an i-In0.52Al0.48As barrier layer from a conventional p+-GaAs0.51Sb0.49/i-In0.52Al0.48As/n-In0.53Ga0.47As structure. Although sensitivity indicated slight decrease, noise equivalent power (NEP) was drastically improved from 303 to 64 pW/Hz1/2 at 300 GHz |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | Tunnel diode / Backward / Millimeter wave / Terahertz wave / GaAsSb / Noise / Detection / Sensitivity |
| Paper # | ED2016-102,MW2016-178 |
| Date of Issue | 2017-01-19 (ED, MW) |
| Conference Information | |
| Committee | MW / ED |
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| Conference Date | 2017/1/26(2days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | Kikai-Shinko-Kaikan Bldg. |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | Compound Semiconductor IC and High-Speed, High-Frequency Devices / Microwave Technologies |
| Chair | Yohei Ishikawa(Kyoto Univ.) / Koichi Maezawa(Univ. of Toyama) |
| Vice Chair | Takao Kuki(Kokushikan Univ.) / Kenjiro Nishikawa(Kagoshima Univ.) / Kenichi Tajima(Mitsubishi Electric) / Kunio Tsuda(Toshiba) |
| Secretary | Takao Kuki(Panasonic) / Kenjiro Nishikawa(Tokyo Inst. of Tech.) / Kenichi Tajima(JAIST) / Kunio Tsuda(New JRC) |
| Assistant | Naoto Sekiya(Univ. of Yamanashi) / Satoshi Ono(Univ. of Electro-Comm.) / Masataka Higashiwaki(NICT) / Toshiyuki Oishi(Saga Univ.) |
| Paper Information | |
| Registration To | Technical Committee on Microwaves / Technical Committee on Electron Devices |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Improvement in Noise Characteristics of Zero-bias GaAsSb-based Backward Diodes |
| Sub Title (in English) | |
| Keyword(1) | Tunnel diode |
| Keyword(2) | Backward |
| Keyword(3) | Millimeter wave |
| Keyword(4) | Terahertz wave |
| Keyword(5) | GaAsSb |
| Keyword(6) | Noise |
| Keyword(7) | Detection |
| Keyword(8) | Sensitivity |
| 1st Author's Name | Tsuyoshi Takahashi |
| 1st Author's Affiliation | Fujitsu Laboratories Ltd.(Fujitsu Labs.) |
| 2nd Author's Name | Masaru Sato |
| 2nd Author's Affiliation | Fujitsu Laboratories Ltd.(Fujitsu Labs.) |
| 3rd Author's Name | Shoichi Shiba |
| 3rd Author's Affiliation | Fujitsu Laboratories Ltd.(Fujitsu Labs.) |
| 4th Author's Name | Yasuhiro Nakasha |
| 4th Author's Affiliation | Fujitsu Laboratories Ltd.(Fujitsu Labs.) |
| 5th Author's Name | Naoki Hara |
| 5th Author's Affiliation | Fujitsu Laboratories Ltd.(Fujitsu Labs.) |
| 6th Author's Name | Taisuke Iwai |
| 6th Author's Affiliation | Fujitsu Laboratories Ltd.(Fujitsu Labs.) |
| 7th Author's Name | Naoya Okamoto |
| 7th Author's Affiliation | Fujitsu Laboratories Ltd.(Fujitsu Labs.) |
| 8th Author's Name | Keiji Watanabe |
| 8th Author's Affiliation | Fujitsu Laboratories Ltd.(Fujitsu Labs.) |
| Date | 2017-01-27 |
| Paper # | ED2016-102,MW2016-178 |
| Volume (vol) | vol.116 |
| Number (no) | ED-431,MW-432 |
| Page | pp.pp.29-33(ED), pp.29-33(MW), |
| #Pages | 5 |
| Date of Issue | 2017-01-19 (ED, MW) |