Presentation 2017-01-31
[Invited Talk] Experimental Study on Operation Speed of Negative Capacitance FET with Ferroelectric HfO2
Masaharu Kobayashi, Nozomu Ueyama, Kyungmin Jang, Toshiro Hiramoto,
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Abstract(in Japanese) (See Japanese page)
Abstract(in English)
Keyword(in Japanese) (See Japanese page)
Keyword(in English)
Paper # EMD2016-79,MR2016-51,SCE2016-57,EID2016-58,ED2016-122,CPM2016-123,SDM2016-122,ICD2016-110,OME2016-91
Date of Issue 2017-01-23 (EMD, MR, SCE, EID, ED, CPM, SDM, ICD, OME)

Conference Information
Committee ICD / CPM / ED / EID / EMD / MR / OME / SCE / SDM
Conference Date 2017/1/30(2days)
Place (in Japanese) (See Japanese page)
Place (in English) Miyajima-Morino-Yado(Hiroshima)
Topics (in Japanese) (See Japanese page)
Topics (in English) Circuit, Device and Engineering Science
Chair Minoru Fujishima(Hiroshima Univ.) / Satoru Noge(Numazu National College of Tech.) / Koichi Maezawa(Univ. of Toyama) / Tomokazu Shiga(Univ. of Electro-Comm.) / Yoshiteru Abe(NTT) / Yoshihiro Okamoto(Ehime Univ.) / Naoki Matsuda(AIST) / Nobuyuki Yoshikawa(Yokohama National Univ.) / Tatsuya Kunikiyo(Renesas)
Vice Chair Hideto Hidaka(Renesas) / Fumihiko Hirose(Yamagata Univ.) / Kunio Tsuda(Toshiba) / Mutsumi Kimura(Ryukoku Univ.) / Yuko Kominami(Shizuoka Univ.) / / / Tatsuo Mori(Aichi Inst. of Tech.) / / Takahiro Shinada(Tohoku Univ.)
Secretary Hideto Hidaka(Hiroshima Univ.) / Fumihiko Hirose(Univ. of Tokyo) / Kunio Tsuda(NTT) / Mutsumi Kimura(Nihon Univ.) / Yuko Kominami(JAIST) / (New JRC) / (NTT) / Tatsuo Mori(Tokyo Inst. of Tech.) / (Sumitomo Denso) / Takahiro Shinada(Fujielectric)
Assistant Takashi Hashimoto(Panasonic) / Masanori Natsui(Tohoku Univ.) / Hiroyuki Ito(Tokyo Inst. of Tech.) / Pham Konkuha(Univ. of Electro-Comm.) / Takashi Sakamoto(NTT) / Yuichi Nakamura(Toyohashi Univ. of Tech.) / Masataka Higashiwaki(NICT) / Toshiyuki Oishi(Saga Univ.) / Rumiko Yamaguchi(Akita Univ.) / Hiroyuki Nitta(Japan Display) / Mitsuru Nakata(NHK) / Takashi Kojiri(ZEON) / Ryosuke Nonaka(Toshiba) / Yoshiki Kayano(Univ. of Electro-Comm.) / Yuichi Hayashi(Tohoku Gakuin Univ.) / Kiwamu Kudo(Toshiba) / Shuhei Yoshida(Kinki Univ.) / Hirotake Kajii(Osaka Univ.) / Dai Taguchi(Tokyo Inst. of Tech.) / Hiroyuki Akaike(Nagoya Univ.) / Yuki Yamanashi(Yokohama National Univ.) / Hiroya Ikeda(Shizuoka Univ.)

Paper Information
Registration To Technical Committee on Integrated Circuits and Devices / Technical Committee on Component Parts and Materials / Technical Committee on Electron Devices / Technical Committee on Electronic Information Displays / Technical Committee on Electromechanical Devices / Technical Committee on Magnetic Recording / Technical Committee on Organic Molecular Electronics / Technical Committee on Superconductive Electronics / Technical Committee on Silicon Device and Materials
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) [Invited Talk] Experimental Study on Operation Speed of Negative Capacitance FET with Ferroelectric HfO2
Sub Title (in English)
Keyword(1)
1st Author's Name Masaharu Kobayashi
1st Author's Affiliation The University of Tokyo(IIS, Univ. of Tokyo)
2nd Author's Name Nozomu Ueyama
2nd Author's Affiliation The University of Tokyo(IIS, Univ. of Tokyo)
3rd Author's Name Kyungmin Jang
3rd Author's Affiliation The University of Tokyo(IIS, Univ. of Tokyo)
4th Author's Name Toshiro Hiramoto
4th Author's Affiliation The University of Tokyo(IIS, Univ. of Tokyo)
Date 2017-01-31
Paper # EMD2016-79,MR2016-51,SCE2016-57,EID2016-58,ED2016-122,CPM2016-123,SDM2016-122,ICD2016-110,OME2016-91
Volume (vol) vol.116
Number (no) EMD-439,MR-440,SCE-441,EID-442,ED-443,CPM-444,SDM-445,ICD-446,OME-447
Page pp.pp.51-54(EMD), pp.51-54(MR), pp.51-54(SCE), pp.51-54(EID), pp.51-54(ED), pp.51-54(CPM), pp.51-54(SDM), pp.51-54(ICD), pp.51-54(OME),
#Pages 4
Date of Issue 2017-01-23 (EMD, MR, SCE, EID, ED, CPM, SDM, ICD, OME)