| Presentation | 2017-01-27 Study on dependence of passivation stress for electrical characteristics of AlGaN/GaN HEMTs by TCAD simulation Toshiyuki Oishi, Yutaro Yamaguchi, Koji Yamanaka, |
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| PDF Download Page |  PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | Effects of passivation residual stress on electrical characteristics for GaN HEMTs have been studied by using a TCAD simulation. After the strain in GaN HEMTs was calculated by a process simulator, polarization charges generated from the strain were added to that generated from spontaneous and piezoelectric polarization of AlGaN and GaN. We have simulated the electrical characteristics such as drain current and gate leakage current depending on gate voltage by varying the residual stress from compressive to tensile values. In the case of the tensile residual stress in the SiN passivation on AlGaN barrier, compressive stress of YY component was observed in AlGaN and GaN layer under the gate electrodes. This compressive stress resulted to increase of the concentration of two dimensional electron gas. Therefore, the drain current increased and the pinch off voltage decreased as compared with the case without residual stress. On the other hand, the gate leakage current decreased due to the rapidly change of the stress direction around the boundary between the gate electrode and the SiN passivation. In the case of the compressive residual stress in SiN, the opposite trends were obtained for the mechanical and electrical characteristics as compared with the tensile residual stress case. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | GaN HEMT / Residual stress / Strain / Drain current / Gate current / TCAD simulation |
| Paper # | ED2016-108,MW2016-184 |
| Date of Issue | 2017-01-19 (ED, MW) |
| Conference Information | |
| Committee | MW / ED |
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| Conference Date | 2017/1/26(2days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | Kikai-Shinko-Kaikan Bldg. |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | Compound Semiconductor IC and High-Speed, High-Frequency Devices / Microwave Technologies |
| Chair | Yohei Ishikawa(Kyoto Univ.) / Koichi Maezawa(Univ. of Toyama) |
| Vice Chair | Takao Kuki(Kokushikan Univ.) / Kenjiro Nishikawa(Kagoshima Univ.) / Kenichi Tajima(Mitsubishi Electric) / Kunio Tsuda(Toshiba) |
| Secretary | Takao Kuki(Panasonic) / Kenjiro Nishikawa(Tokyo Inst. of Tech.) / Kenichi Tajima(JAIST) / Kunio Tsuda(New JRC) |
| Assistant | Naoto Sekiya(Univ. of Yamanashi) / Satoshi Ono(Univ. of Electro-Comm.) / Masataka Higashiwaki(NICT) / Toshiyuki Oishi(Saga Univ.) |
| Paper Information | |
| Registration To | Technical Committee on Microwaves / Technical Committee on Electron Devices |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Study on dependence of passivation stress for electrical characteristics of AlGaN/GaN HEMTs by TCAD simulation |
| Sub Title (in English) | |
| Keyword(1) | GaN HEMT |
| Keyword(2) | Residual stress |
| Keyword(3) | Strain |
| Keyword(4) | Drain current |
| Keyword(5) | Gate current |
| Keyword(6) | TCAD simulation |
| 1st Author's Name | Toshiyuki Oishi |
| 1st Author's Affiliation | Saga university(Saga univ.) |
| 2nd Author's Name | Yutaro Yamaguchi |
| 2nd Author's Affiliation | Mitsubishi Electric corporation(Mitsubishi Electric corp.) |
| 3rd Author's Name | Koji Yamanaka |
| 3rd Author's Affiliation | Mitsubishi Electric corporation(Mitsubishi Electric corp.) |
| Date | 2017-01-27 |
| Paper # | ED2016-108,MW2016-184 |
| Volume (vol) | vol.116 |
| Number (no) | ED-431,MW-432 |
| Page | pp.pp.63-68(ED), pp.63-68(MW), |
| #Pages | 6 |
| Date of Issue | 2017-01-19 (ED, MW) |