| Presentation | 2017-01-27 An X-band Low Loss/High Power SPST Switch Using GaN on Si Ryota Komaru, Masatake Hangai, Kazuhiko Nakahara, Hiroyuki Okazaki, Koji Yamanaka, |
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| PDF Download Page |  PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | An X-band low loss and high power switch using GaN on Si has been developed. The high power switch utilized asymmetric circuit topology and parallel resonator with inductor and FET for low insertion loss. The switch MMIC is fabricated in X-band with a size of 1.05x1.95mm2. The measured insertion loss at RX-mode was 1.28dB and the isolation at TX-mode was 11dB in worst case in 30% fractional bandwidth of X-band. Furthermore, measured isolation compression was less than 0.5dB at 43.1dBm. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | switch / GaN on Si / MMIC / Low-loss / High-power |
| Paper # | ED2016-106,MW2016-182 |
| Date of Issue | 2017-01-19 (ED, MW) |
| Conference Information | |
| Committee | MW / ED |
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| Conference Date | 2017/1/26(2days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | Kikai-Shinko-Kaikan Bldg. |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | Compound Semiconductor IC and High-Speed, High-Frequency Devices / Microwave Technologies |
| Chair | Yohei Ishikawa(Kyoto Univ.) / Koichi Maezawa(Univ. of Toyama) |
| Vice Chair | Takao Kuki(Kokushikan Univ.) / Kenjiro Nishikawa(Kagoshima Univ.) / Kenichi Tajima(Mitsubishi Electric) / Kunio Tsuda(Toshiba) |
| Secretary | Takao Kuki(Panasonic) / Kenjiro Nishikawa(Tokyo Inst. of Tech.) / Kenichi Tajima(JAIST) / Kunio Tsuda(New JRC) |
| Assistant | Naoto Sekiya(Univ. of Yamanashi) / Satoshi Ono(Univ. of Electro-Comm.) / Masataka Higashiwaki(NICT) / Toshiyuki Oishi(Saga Univ.) |
| Paper Information | |
| Registration To | Technical Committee on Microwaves / Technical Committee on Electron Devices |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | An X-band Low Loss/High Power SPST Switch Using GaN on Si |
| Sub Title (in English) | |
| Keyword(1) | switch |
| Keyword(2) | GaN on Si |
| Keyword(3) | MMIC |
| Keyword(4) | Low-loss |
| Keyword(5) | High-power |
| 1st Author's Name | Ryota Komaru |
| 1st Author's Affiliation | Mitsubishi Electric Corporation(Mitsubishi Electric) |
| 2nd Author's Name | Masatake Hangai |
| 2nd Author's Affiliation | Mitsubishi Electric Corporation(Mitsubishi Electric) |
| 3rd Author's Name | Kazuhiko Nakahara |
| 3rd Author's Affiliation | Mitsubishi Electric Corporation(Mitsubishi Electric) |
| 4th Author's Name | Hiroyuki Okazaki |
| 4th Author's Affiliation | Mitsubishi Electric Corporation(Mitsubishi Electric) |
| 5th Author's Name | Koji Yamanaka |
| 5th Author's Affiliation | Mitsubishi Electric Corporation(Mitsubishi Electric) |
| Date | 2017-01-27 |
| Paper # | ED2016-106,MW2016-182 |
| Volume (vol) | vol.116 |
| Number (no) | ED-431,MW-432 |
| Page | pp.pp.53-56(ED), pp.53-56(MW), |
| #Pages | 4 |
| Date of Issue | 2017-01-19 (ED, MW) |