| Presentation | 2017-01-27 30W Output/60% PAE GaN Power Amplifier at X-band 8% Relative Bandwidth Utilizing 0.15um GaN HEMT Technology Yoshifumi Kawamura, Masatake Hangai, Tomohiro Mizutani, Kenichi Tomiyama, Koji Yamanaka, |
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| PDF Download Page |  PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | In this paper, a 30W-class X-band high-efficiency Internally Matched FET (IMFET) implemented in a 0.15 um GaN HEMT process is presented. The fabricated HPA has achieved the Pout of 28-31.5 W and the PAE (power added efficiency) of 57-60% and the gain of 11-12.5dB over 8% relative bandwidth. To the authors’ knowledge, this is one of the highest level performance among ever-reported ones. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | High-power amplifier / gallium nitride (GaN) / X-band / Internally Matched FET |
| Paper # | ED2016-111,MW2016-187 |
| Date of Issue | 2017-01-19 (ED, MW) |
| Conference Information | |
| Committee | MW / ED |
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| Conference Date | 2017/1/26(2days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | Kikai-Shinko-Kaikan Bldg. |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | Compound Semiconductor IC and High-Speed, High-Frequency Devices / Microwave Technologies |
| Chair | Yohei Ishikawa(Kyoto Univ.) / Koichi Maezawa(Univ. of Toyama) |
| Vice Chair | Takao Kuki(Kokushikan Univ.) / Kenjiro Nishikawa(Kagoshima Univ.) / Kenichi Tajima(Mitsubishi Electric) / Kunio Tsuda(Toshiba) |
| Secretary | Takao Kuki(Panasonic) / Kenjiro Nishikawa(Tokyo Inst. of Tech.) / Kenichi Tajima(JAIST) / Kunio Tsuda(New JRC) |
| Assistant | Naoto Sekiya(Univ. of Yamanashi) / Satoshi Ono(Univ. of Electro-Comm.) / Masataka Higashiwaki(NICT) / Toshiyuki Oishi(Saga Univ.) |
| Paper Information | |
| Registration To | Technical Committee on Microwaves / Technical Committee on Electron Devices |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | 30W Output/60% PAE GaN Power Amplifier at X-band 8% Relative Bandwidth Utilizing 0.15um GaN HEMT Technology |
| Sub Title (in English) | |
| Keyword(1) | High-power amplifier |
| Keyword(2) | gallium nitride (GaN) |
| Keyword(3) | X-band |
| Keyword(4) | Internally Matched FET |
| 1st Author's Name | Yoshifumi Kawamura |
| 1st Author's Affiliation | Mitsubishi Electric Corporation(Mitsubishi Electric) |
| 2nd Author's Name | Masatake Hangai |
| 2nd Author's Affiliation | Mitsubishi Electric Corporation(Mitsubishi Electric) |
| 3rd Author's Name | Tomohiro Mizutani |
| 3rd Author's Affiliation | Mitsubishi Electric Corporation(Mitsubishi Electric) |
| 4th Author's Name | Kenichi Tomiyama |
| 4th Author's Affiliation | Mitsubishi Electric Corporation(Mitsubishi Electric) |
| 5th Author's Name | Koji Yamanaka |
| 5th Author's Affiliation | Mitsubishi Electric Corporation(Mitsubishi Electric) |
| Date | 2017-01-27 |
| Paper # | ED2016-111,MW2016-187 |
| Volume (vol) | vol.116 |
| Number (no) | ED-431,MW-432 |
| Page | pp.pp.81-84(ED), pp.81-84(MW), |
| #Pages | 4 |
| Date of Issue | 2017-01-19 (ED, MW) |