| Presentation | 2016-12-12 Reduced Current Collapse in AlGaN/GaN HEMTs with a 3-Dimensional Field Plate Suzuki Atsuya, Joel Asubar, Tokuda Hirokuni, Kuzuhara Masaaki, |
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| PDF Download Page |  PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | We have fabricated a novel AlGaN/GaN HEMT with a multi-grooved and fin-shaped gate field-plate (G-FP), and studied its effect on the current collapse. Compared to the conventional gate FP device, the novel HEMT with a 3-dimensional FP (3DFP) structure exhibited a minimum increase in the dynamic on-resistance, demonstrating that an almost perfect collapse-free operation was achieved with a normalized dynamic on-resistance of less than 1.1. The results of groove depth dependence indicated that the current collapse in 3DFP HEMTs was most effectively suppressed when the groove depth was adjusted so that the bottom of the 3DFP electrode was aligned with the depth of 2-dimensional electron gas (2DEG) in a GaN channel. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | AlGaN/GaN HEMT / Current Collapse / 3DFP |
| Paper # | ED2016-65,CPM2016-98,LQE2016-81 |
| Date of Issue | 2016-12-05 (ED, CPM, LQE) |
| Conference Information | |
| Committee | CPM / LQE / ED |
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| Conference Date | 2016/12/12(2days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | Kyoto University |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | Nitride semiconductors, optoelectronic devices, and related materials |
| Chair | Satoru Noge(Numazu National College of Tech.) / Susumu Noda(Kyoto Univ.) / Koichi Maezawa(Univ. of Toyama) |
| Vice Chair | Fumihiko Hirose(Yamagata Univ.) / Tsuyoshi Yamamoto(Fujitsu Labs.) / Kunio Tsuda(Toshiba) |
| Secretary | Fumihiko Hirose(NTT) / Tsuyoshi Yamamoto(Nihon Univ.) / Kunio Tsuda(NTT) |
| Assistant | Takashi Sakamoto(NTT) / Yuichi Nakamura(Toyohashi Univ. of Tech.) / / Masataka Higashiwaki(NICT) / Toshiyuki Oishi(Saga Univ.) |
| Paper Information | |
| Registration To | Technical Committee on Component Parts and Materials / Technical Committee on Lasers and Quantum Electronics / Technical Committee on Electron Devices |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Reduced Current Collapse in AlGaN/GaN HEMTs with a 3-Dimensional Field Plate |
| Sub Title (in English) | |
| Keyword(1) | AlGaN/GaN HEMT |
| Keyword(2) | Current Collapse |
| Keyword(3) | 3DFP |
| 1st Author's Name | Suzuki Atsuya |
| 1st Author's Affiliation | University of Fukui(Univ. Fukui) |
| 2nd Author's Name | Joel Asubar |
| 2nd Author's Affiliation | University of Fukui(Univ. Fukui) |
| 3rd Author's Name | Tokuda Hirokuni |
| 3rd Author's Affiliation | University of Fukui(Univ. Fukui) |
| 4th Author's Name | Kuzuhara Masaaki |
| 4th Author's Affiliation | University of Fukui(Univ. Fukui) |
| Date | 2016-12-12 |
| Paper # | ED2016-65,CPM2016-98,LQE2016-81 |
| Volume (vol) | vol.116 |
| Number (no) | ED-356,CPM-357,LQE-358 |
| Page | pp.pp.41-44(ED), pp.41-44(CPM), pp.41-44(LQE), |
| #Pages | 4 |
| Date of Issue | 2016-12-05 (ED, CPM, LQE) |