| Presentation | 2016-12-12 Low-damage Recess Etching of AlGaN/GaN Hetero-structure by Electrochemical Process Yusuke Kumazaki, Keisuke Uemura, Taketomo Sato, |
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| PDF Download Page |  PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | Electrochemical etching process is demonstrated in this paper to fabricate recessed-gate AlGaN/GaN high electron mobility transistors without inducing damage. Photoelectrochemical measurements of AlGaN/GaN hetero-structures revealed that two kinds of carriers generated in either AlGaN layer or GaN layer could be supplied to solid/liquid interface separately by selecting proper light wavelength and voltage. Photo-carriers generated in GaN layer caused inhomogeneous etching, whereas those generated in AlGaN layer caused homogeneous etching. Moreover in electrochemical etching utilizing photo-carriers generated in AlGaN layer, self-terminating phenomenon was observed, and self-terminating depth could be controlled by light intensity. We believe that electrochemical etching process which has these excellent features is promising as recess etching technique. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | Gallium Nitride / HEMT / gate recess / electrochemical etching / self-terminating |
| Paper # | ED2016-66,CPM2016-99,LQE2016-82 |
| Date of Issue | 2016-12-05 (ED, CPM, LQE) |
| Conference Information | |
| Committee | CPM / LQE / ED |
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| Conference Date | 2016/12/12(2days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | Kyoto University |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | Nitride semiconductors, optoelectronic devices, and related materials |
| Chair | Satoru Noge(Numazu National College of Tech.) / Susumu Noda(Kyoto Univ.) / Koichi Maezawa(Univ. of Toyama) |
| Vice Chair | Fumihiko Hirose(Yamagata Univ.) / Tsuyoshi Yamamoto(Fujitsu Labs.) / Kunio Tsuda(Toshiba) |
| Secretary | Fumihiko Hirose(NTT) / Tsuyoshi Yamamoto(Nihon Univ.) / Kunio Tsuda(NTT) |
| Assistant | Takashi Sakamoto(NTT) / Yuichi Nakamura(Toyohashi Univ. of Tech.) / / Masataka Higashiwaki(NICT) / Toshiyuki Oishi(Saga Univ.) |
| Paper Information | |
| Registration To | Technical Committee on Component Parts and Materials / Technical Committee on Lasers and Quantum Electronics / Technical Committee on Electron Devices |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Low-damage Recess Etching of AlGaN/GaN Hetero-structure by Electrochemical Process |
| Sub Title (in English) | |
| Keyword(1) | Gallium Nitride |
| Keyword(2) | HEMT |
| Keyword(3) | gate recess |
| Keyword(4) | electrochemical etching |
| Keyword(5) | self-terminating |
| 1st Author's Name | Yusuke Kumazaki |
| 1st Author's Affiliation | Hokkaido University(Hokkaido Univ.) |
| 2nd Author's Name | Keisuke Uemura |
| 2nd Author's Affiliation | Hokkaido University(Hokkaido Univ.) |
| 3rd Author's Name | Taketomo Sato |
| 3rd Author's Affiliation | Hokkaido University(Hokkaido Univ.) |
| Date | 2016-12-12 |
| Paper # | ED2016-66,CPM2016-99,LQE2016-82 |
| Volume (vol) | vol.116 |
| Number (no) | ED-356,CPM-357,LQE-358 |
| Page | pp.pp.45-50(ED), pp.45-50(CPM), pp.45-50(LQE), |
| #Pages | 6 |
| Date of Issue | 2016-12-05 (ED, CPM, LQE) |