| Presentation | 2016-12-12 Observation of Initial Stage of Degradation in Au/Ni/n-GaN Schottky Diodes Using Scanning Internal Photoemission Microscopy Kenji Shiojima, Shingo Murase, Masataka Maeda, Tomoyoshi Mishima, |
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| PDF Download Page |  PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | We characterized an early stage of interface degradation by high-reverse-voltage application in Au/Ni/n-GaN Schottky contacts using scanning internal photoemission (SIPM). Photocurrent was fairly uniform over the dot without the voltage application. However after applying voltage stress with a current compliance of 1×10-8 A, we find some spots standing out from uniform surrounding. The calculated forward I-V curve from the SIPM results was closed to the experimental one. It is speculated that the leakage current can preferentially flow through the low-barrier spots before catastrophic degradation. We confirmed that SIPM is a powerful tool for characterizing an early stage of interface degradation in Schottky contacts. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | n-GaN / Schottky contact / Scanning internal photoemission microscopy / degradation by voltage stress |
| Paper # | ED2016-58,CPM2016-91,LQE2016-74 |
| Date of Issue | 2016-12-05 (ED, CPM, LQE) |
| Conference Information | |
| Committee | CPM / LQE / ED |
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| Conference Date | 2016/12/12(2days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | Kyoto University |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | Nitride semiconductors, optoelectronic devices, and related materials |
| Chair | Satoru Noge(Numazu National College of Tech.) / Susumu Noda(Kyoto Univ.) / Koichi Maezawa(Univ. of Toyama) |
| Vice Chair | Fumihiko Hirose(Yamagata Univ.) / Tsuyoshi Yamamoto(Fujitsu Labs.) / Kunio Tsuda(Toshiba) |
| Secretary | Fumihiko Hirose(NTT) / Tsuyoshi Yamamoto(Nihon Univ.) / Kunio Tsuda(NTT) |
| Assistant | Takashi Sakamoto(NTT) / Yuichi Nakamura(Toyohashi Univ. of Tech.) / / Masataka Higashiwaki(NICT) / Toshiyuki Oishi(Saga Univ.) |
| Paper Information | |
| Registration To | Technical Committee on Component Parts and Materials / Technical Committee on Lasers and Quantum Electronics / Technical Committee on Electron Devices |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Observation of Initial Stage of Degradation in Au/Ni/n-GaN Schottky Diodes Using Scanning Internal Photoemission Microscopy |
| Sub Title (in English) | |
| Keyword(1) | n-GaN |
| Keyword(2) | Schottky contact |
| Keyword(3) | Scanning internal photoemission microscopy |
| Keyword(4) | degradation by voltage stress |
| 1st Author's Name | Kenji Shiojima |
| 1st Author's Affiliation | University of Fukuiv(Univ. of Fukui) |
| 2nd Author's Name | Shingo Murase |
| 2nd Author's Affiliation | University of Fukuiv(Univ. of Fukui) |
| 3rd Author's Name | Masataka Maeda |
| 3rd Author's Affiliation | University of Fukuiv(Univ. of Fukui) |
| 4th Author's Name | Tomoyoshi Mishima |
| 4th Author's Affiliation | Hosei University(Hosei Univ.) |
| Date | 2016-12-12 |
| Paper # | ED2016-58,CPM2016-91,LQE2016-74 |
| Volume (vol) | vol.116 |
| Number (no) | ED-356,CPM-357,LQE-358 |
| Page | pp.pp.5-8(ED), pp.5-8(CPM), pp.5-8(LQE), |
| #Pages | 4 |
| Date of Issue | 2016-12-05 (ED, CPM, LQE) |