| Presentation | 2016-12-12 Evaluating Current Collapse of GaN HEMT devices by Carrier Number Kohei Oasa, Akira Yoshioka, Yasunobu Saito, Takuo Kikuchi, Tatsuya Ohguro, Takeshi Hamamoto, Toru Sugiyama, |
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| PDF Download Page |  PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | We report a new method to evaluate current collapse. To exclude self-heating effect during dynamic test, we propose carrier number as a new indicator. Carrier number could be evaluated from capacitance measurement. Change in capacitance gives direct evidence of carrier decrease and the region it occurs. Proposed method was verified and confirmed to have a high accuracy by comparing with dynamic testing results. New method makes it possible to evaluate the change of carrier number and mobility independently, which can be used to model and solve the current collapse phenomenon. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | Gallium Nitride / Power Devices / Current Collapse / Carrier Number / Capacitance Measurement / Field Plate |
| Paper # | ED2016-62,CPM2016-95,LQE2016-78 |
| Date of Issue | 2016-12-05 (ED, CPM, LQE) |
| Conference Information | |
| Committee | CPM / LQE / ED |
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| Conference Date | 2016/12/12(2days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | Kyoto University |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | Nitride semiconductors, optoelectronic devices, and related materials |
| Chair | Satoru Noge(Numazu National College of Tech.) / Susumu Noda(Kyoto Univ.) / Koichi Maezawa(Univ. of Toyama) |
| Vice Chair | Fumihiko Hirose(Yamagata Univ.) / Tsuyoshi Yamamoto(Fujitsu Labs.) / Kunio Tsuda(Toshiba) |
| Secretary | Fumihiko Hirose(NTT) / Tsuyoshi Yamamoto(Nihon Univ.) / Kunio Tsuda(NTT) |
| Assistant | Takashi Sakamoto(NTT) / Yuichi Nakamura(Toyohashi Univ. of Tech.) / / Masataka Higashiwaki(NICT) / Toshiyuki Oishi(Saga Univ.) |
| Paper Information | |
| Registration To | Technical Committee on Component Parts and Materials / Technical Committee on Lasers and Quantum Electronics / Technical Committee on Electron Devices |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Evaluating Current Collapse of GaN HEMT devices by Carrier Number |
| Sub Title (in English) | |
| Keyword(1) | Gallium Nitride |
| Keyword(2) | Power Devices |
| Keyword(3) | Current Collapse |
| Keyword(4) | Carrier Number |
| Keyword(5) | Capacitance Measurement |
| Keyword(6) | Field Plate |
| 1st Author's Name | Kohei Oasa |
| 1st Author's Affiliation | Toshiba Corp.(TOSHIBA) |
| 2nd Author's Name | Akira Yoshioka |
| 2nd Author's Affiliation | Toshiba Corp.(TOSHIBA) |
| 3rd Author's Name | Yasunobu Saito |
| 3rd Author's Affiliation | Toshiba Corp.(TOSHIBA) |
| 4th Author's Name | Takuo Kikuchi |
| 4th Author's Affiliation | Toshiba Corp.(TOSHIBA) |
| 5th Author's Name | Tatsuya Ohguro |
| 5th Author's Affiliation | Toshiba Corp.(TOSHIBA) |
| 6th Author's Name | Takeshi Hamamoto |
| 6th Author's Affiliation | Toshiba Corp.(TOSHIBA) |
| 7th Author's Name | Toru Sugiyama |
| 7th Author's Affiliation | Toshiba Corp.(TOSHIBA) |
| Date | 2016-12-12 |
| Paper # | ED2016-62,CPM2016-95,LQE2016-78 |
| Volume (vol) | vol.116 |
| Number (no) | ED-356,CPM-357,LQE-358 |
| Page | pp.pp.27-30(ED), pp.27-30(CPM), pp.27-30(LQE), |
| #Pages | 4 |
| Date of Issue | 2016-12-05 (ED, CPM, LQE) |