| Presentation | 2016-12-12 Effect of Surface Treatment in Au/Ni Schottky Diodes Formed on Cleaved m-Plane Surfaces of Free-Standing n-GaN Sub-strates Kenji Shiojima, Moe Naganawa, Tomoyoshi Mishima, |
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| PDF Download Page |  PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | We fabricated and characterized Au/Ni Schottky contacts on cleaved m-plane free-standing n-GaN surfaces (i) without any surface treatment, (ii) with H2O2 treatment, or (iii) with HCl treatment. The as-cleaved samples showed I-V characteristics with small n-values and less diode-to-diode variation. However, the H2O2 samples had much smaller Schottky barrier height. Whereas the HCl samples exhibited significantly large diode-to-diode variation. It is confirmed that cleaving without any surface treatment can provide a cleaner surface to form Schottky diodes on m-plane n-GaN surfaces than that with conventional HCl treatment. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | m-plane GaN / cleaving / surface treatment / Schottky contact |
| Paper # | ED2016-60,CPM2016-93,LQE2016-76 |
| Date of Issue | 2016-12-05 (ED, CPM, LQE) |
| Conference Information | |
| Committee | CPM / LQE / ED |
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| Conference Date | 2016/12/12(2days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | Kyoto University |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | Nitride semiconductors, optoelectronic devices, and related materials |
| Chair | Satoru Noge(Numazu National College of Tech.) / Susumu Noda(Kyoto Univ.) / Koichi Maezawa(Univ. of Toyama) |
| Vice Chair | Fumihiko Hirose(Yamagata Univ.) / Tsuyoshi Yamamoto(Fujitsu Labs.) / Kunio Tsuda(Toshiba) |
| Secretary | Fumihiko Hirose(NTT) / Tsuyoshi Yamamoto(Nihon Univ.) / Kunio Tsuda(NTT) |
| Assistant | Takashi Sakamoto(NTT) / Yuichi Nakamura(Toyohashi Univ. of Tech.) / / Masataka Higashiwaki(NICT) / Toshiyuki Oishi(Saga Univ.) |
| Paper Information | |
| Registration To | Technical Committee on Component Parts and Materials / Technical Committee on Lasers and Quantum Electronics / Technical Committee on Electron Devices |
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| Language | ENG-JTITLE |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Effect of Surface Treatment in Au/Ni Schottky Diodes Formed on Cleaved m-Plane Surfaces of Free-Standing n-GaN Sub-strates |
| Sub Title (in English) | * |
| Keyword(1) | m-plane GaN |
| Keyword(2) | cleaving |
| Keyword(3) | surface treatment |
| Keyword(4) | Schottky contact |
| 1st Author's Name | Kenji Shiojima |
| 1st Author's Affiliation | University of Fukui(Univ. of Fukui) |
| 2nd Author's Name | Moe Naganawa |
| 2nd Author's Affiliation | University of Fukui(Univ. of Fukui) |
| 3rd Author's Name | Tomoyoshi Mishima |
| 3rd Author's Affiliation | Hosei University(Hosei Univ.) |
| Date | 2016-12-12 |
| Paper # | ED2016-60,CPM2016-93,LQE2016-76 |
| Volume (vol) | vol.116 |
| Number (no) | ED-356,CPM-357,LQE-358 |
| Page | pp.pp.15-20(ED), pp.15-20(CPM), pp.15-20(LQE), |
| #Pages | 6 |
| Date of Issue | 2016-12-05 (ED, CPM, LQE) |