| Presentation | 2016-12-12 Current-voltage characteristics of Ni/Au Schottky diodes fabricated on InAlN/AlN/GaN heterostructures grown on GaN substrates Junji Kotani, Atsushi Yamada, Tetsuro Ishiguro, Norikazu Nakamura, |
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| PDF Download Page |  PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | This paper investigate the effects of threading dislocation density on the leakage characteristics of Ni/Au Schottky diodes fabricated on InAlN high-electron-mobility transistor (HEMT) structures. Threading dislocation densities were determined to be 1.8E4 cm-2 and 1.2E9 cm-2 for the HEMT structures grown on GaN and sapphire substrates, respectively. Leakage characteristics of Ni/Au Schottky diodes were compared between the two samples and a reduction of the leakage current of about three to four orders of magnitude was observed in the forward bias region. For the high reverse bias region, however, no significant improvement was confirmed. We believe the leakage current in the low bias region is governed by a dislocation-related Frenkel-Poole emission and the leakage current in the high reverse bias region originates from field emission due to the large internal electric field in the InAlN barrier layer. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | GaN / HEMT / InAlN / Schottky diode / Gate leakage current / Dislocation |
| Paper # | ED2016-57,CPM2016-90,LQE2016-73 |
| Date of Issue | 2016-12-05 (ED, CPM, LQE) |
| Conference Information | |
| Committee | CPM / LQE / ED |
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| Conference Date | 2016/12/12(2days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | Kyoto University |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | Nitride semiconductors, optoelectronic devices, and related materials |
| Chair | Satoru Noge(Numazu National College of Tech.) / Susumu Noda(Kyoto Univ.) / Koichi Maezawa(Univ. of Toyama) |
| Vice Chair | Fumihiko Hirose(Yamagata Univ.) / Tsuyoshi Yamamoto(Fujitsu Labs.) / Kunio Tsuda(Toshiba) |
| Secretary | Fumihiko Hirose(NTT) / Tsuyoshi Yamamoto(Nihon Univ.) / Kunio Tsuda(NTT) |
| Assistant | Takashi Sakamoto(NTT) / Yuichi Nakamura(Toyohashi Univ. of Tech.) / / Masataka Higashiwaki(NICT) / Toshiyuki Oishi(Saga Univ.) |
| Paper Information | |
| Registration To | Technical Committee on Component Parts and Materials / Technical Committee on Lasers and Quantum Electronics / Technical Committee on Electron Devices |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Current-voltage characteristics of Ni/Au Schottky diodes fabricated on InAlN/AlN/GaN heterostructures grown on GaN substrates |
| Sub Title (in English) | |
| Keyword(1) | GaN |
| Keyword(2) | HEMT |
| Keyword(3) | InAlN |
| Keyword(4) | Schottky diode |
| Keyword(5) | Gate leakage current |
| Keyword(6) | Dislocation |
| 1st Author's Name | Junji Kotani |
| 1st Author's Affiliation | Fujitsu laboratories(Fujitsu Lab.) |
| 2nd Author's Name | Atsushi Yamada |
| 2nd Author's Affiliation | Fujitsu laboratories(Fujitsu Lab.) |
| 3rd Author's Name | Tetsuro Ishiguro |
| 3rd Author's Affiliation | Fujitsu laboratories(Fujitsu Lab.) |
| 4th Author's Name | Norikazu Nakamura |
| 4th Author's Affiliation | Fujitsu laboratories(Fujitsu Lab.) |
| Date | 2016-12-12 |
| Paper # | ED2016-57,CPM2016-90,LQE2016-73 |
| Volume (vol) | vol.116 |
| Number (no) | ED-356,CPM-357,LQE-358 |
| Page | pp.pp.1-4(ED), pp.1-4(CPM), pp.1-4(LQE), |
| #Pages | 4 |
| Date of Issue | 2016-12-05 (ED, CPM, LQE) |