| Presentation | 2016-12-19 [Invited Talk] Evaluation of transistor performance in single and double δ-doping in InP-based high-electron-mobility transistors with MOVPE-grown InAs/In0.8Ga0.2As quantum-well Amine El Moutaouakil, Hiroki Sugiyama, Hideaki Matsuzaki, |
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| PDF Download Page |  PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | InP-based high-electron-mobility transistors (HEMTs) with InAs quantum-well have exhibited record high-speed performances, thanks to their high electron mobility and saturation velocity. Recently, the integration of a double δ-doping in HEMT structures is also used to boost the operation speed. However, there are no comprehensive and quantitative reports comparing similar structures with both single- and double-doping layers. In this review, we report on an InP-based HEMT with a novel 6-nm-thick InAs/In0.8Ga0.2As quantum well in the channel, and we will discuss the differences in the DC and RF performances for the fabricated HEMTs with a single-δ-doped (SD) layer and with a double-δ-doped (DD) layers. We will also analyze the delay-time for both structures. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | HEMTInAsInGaAsDCRFMillimeter-waveTHzterahertz-wave devices and systems |
| Paper # | ED2016-80 |
| Date of Issue | 2016-12-12 (ED) |
| Conference Information | |
| Committee | ED |
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| Conference Date | 2016/12/19(2days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | RIEC, Tohoku Univ |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | Millimeter-wave, terahertz-wave devices and systems |
| Chair | Koichi Maezawa(Univ. of Toyama) |
| Vice Chair | Kunio Tsuda(Toshiba) |
| Secretary | Kunio Tsuda(JAIST) |
| Assistant | Masataka Higashiwaki(NICT) / Toshiyuki Oishi(Saga Univ.) |
| Paper Information | |
| Registration To | Technical Committee on Electron Devices |
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| Language | ENG |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | [Invited Talk] Evaluation of transistor performance in single and double δ-doping in InP-based high-electron-mobility transistors with MOVPE-grown InAs/In0.8Ga0.2As quantum-well |
| Sub Title (in English) | |
| Keyword(1) | HEMTInAsInGaAsDCRFMillimeter-waveTHzterahertz-wave devices and systems |
| 1st Author's Name | Amine El Moutaouakil |
| 1st Author's Affiliation | Nippon Telegraph and Telephone Corporation(NTT) |
| 2nd Author's Name | Hiroki Sugiyama |
| 2nd Author's Affiliation | Nippon Telegraph and Telephone Corporation(NTT) |
| 3rd Author's Name | Hideaki Matsuzaki |
| 3rd Author's Affiliation | Nippon Telegraph and Telephone Corporation(NTT) |
| Date | 2016-12-19 |
| Paper # | ED2016-80 |
| Volume (vol) | vol.116 |
| Number (no) | ED-375 |
| Page | pp.pp.1-5(ED), |
| #Pages | 5 |
| Date of Issue | 2016-12-12 (ED) |