Presentation 2017-01-26
DC Biased Inorganic Electroluminescent Devices Having Cu2O Semiconductor
Kantarou Suzuki, Kunitoshi Yanagihara, Noboru Miura,
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Abstract(in Japanese) (See Japanese page)
Abstract(in English) In order to achieve high efficient electroluminescence (EL), impact-excitation type EL device in which DC electric field excite semiconductor layers were investigated. In these devices n-type phosphor layer / p-type film / n-type film are sandwiched between the electrodes. Two p-n junction act as carrier control and hot electron source , respectively. P-type layer is a key material because p-type layer acts two roles. Cuprous oxide thin film and sheet was investigated as a p-type semiconductor. Electric properties of ZnS / Cu2O and Cu2O / ZnO junction were measured.
Keyword(in Japanese) (See Japanese page)
Keyword(in English) DC Biased Inorganic EL / n-p-n structure / Cu2O sheet / Thin-film
Paper # EID2016-37
Date of Issue 2017-01-19 (EID)

Conference Information
Committee EID / ITE-IDY / IEE-EDD / IEIJ-SSL / SID-JC
Conference Date 2017/1/26(2days)
Place (in Japanese) (See Japanese page)
Place (in English) Tokushima Univ.
Topics (in Japanese) (See Japanese page)
Topics (in English) Joint Meeting of Emissive/Non-emissive Displays
Chair Tomokazu Shiga(Univ. of Electro-Comm.) / Keiichi Betsui(Hitachi)
Vice Chair Mutsumi Kimura(Ryukoku Univ.) / Yuko Kominami(Shizuoka Univ.) / Yoshihide Fujisaki(NHK)
Secretary Mutsumi Kimura(NTT) / Yuko Kominami(Tokyo Inst. of Tech.) / Yoshihide Fujisaki(Shizuoka Univ.)
Assistant Rumiko Yamaguchi(Akita Univ.) / Hiroyuki Nitta(Japan Display) / Mitsuru Nakata(NHK) / Takashi Kojiri(ZEON) / Ryosuke Nonaka(Toshiba)

Paper Information
Registration To Technical Committee on Electronic Information Displays / Technical Group on Information Display / Technical Group on Electron Devices / * / Society for Information Display Japan Chapter
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) DC Biased Inorganic Electroluminescent Devices Having Cu2O Semiconductor
Sub Title (in English)
Keyword(1) DC Biased Inorganic EL
Keyword(2) n-p-n structure
Keyword(3) Cu2O sheet
Keyword(4) Thin-film
1st Author's Name Kantarou Suzuki
1st Author's Affiliation Meiji University(Meiji Univ.)
2nd Author's Name Kunitoshi Yanagihara
2nd Author's Affiliation Meiji University(Meiji Univ.)
3rd Author's Name Noboru Miura
3rd Author's Affiliation Meiji University(Meiji Univ.)
Date 2017-01-26
Paper # EID2016-37
Volume (vol) vol.116
Number (no) EID-430
Page pp.pp.49-52(EID),
#Pages 4
Date of Issue 2017-01-19 (EID)