Presentation 2016-12-19
Design and fabrication of terahertz detectors based on 180 nm CMOS process technology
Kosuke Wakita, Masayuki Ikebe, Stevanus Arnold, Taiichi Otsuji, Yuma Takida, Hiroaki Minamide, Eiichi Sano,
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Abstract(in Japanese) (See Japanese page)
Abstract(in English) Use of terahertz waves for imaging is gaining increased interest. A CMOS cascode amplifier biased near the threshold voltage of a MOSFET for terahertz direct detection is proposed. A CMOS terahertz imaging pixel is designed and fabricated on the basis of a low-cost 180 nm CMOS process technology. The imaging pixel consists of a microstrip patch antenna, an impedance-matching circuit, and the direct detector. The imaging circuit occupies 250 × 180 um^2. It achieves a responsivity of 51.9 kV/W at 0.915 THz and a noise equivalent power (NEP) of 358 pW/Hz^1/2 at a modulation frequency of 31 Hz. The NEP is estimated to be reduced to 42 pW/Hz^1/2 at a higher modulation frequency of 100 kHz.
Keyword(in Japanese) (See Japanese page)
Keyword(in English) Terahertz / THz / Imaging / CMOS / Detector / Responsivity / NEP
Paper # ED2016-83
Date of Issue 2016-12-12 (ED)

Conference Information
Committee ED
Conference Date 2016/12/19(2days)
Place (in Japanese) (See Japanese page)
Place (in English) RIEC, Tohoku Univ
Topics (in Japanese) (See Japanese page)
Topics (in English) Millimeter-wave, terahertz-wave devices and systems
Chair Koichi Maezawa(Univ. of Toyama)
Vice Chair Kunio Tsuda(Toshiba)
Secretary Kunio Tsuda(JAIST)
Assistant Masataka Higashiwaki(NICT) / Toshiyuki Oishi(Saga Univ.)

Paper Information
Registration To Technical Committee on Electron Devices
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) Design and fabrication of terahertz detectors based on 180 nm CMOS process technology
Sub Title (in English)
Keyword(1) Terahertz
Keyword(2) THz
Keyword(3) Imaging
Keyword(4) CMOS
Keyword(5) Detector
Keyword(6) Responsivity
Keyword(7) NEP
1st Author's Name Kosuke Wakita
1st Author's Affiliation Hokkaido University(Hokkaido Univ.)
2nd Author's Name Masayuki Ikebe
2nd Author's Affiliation Hokkaido University(Hokkaido Univ.)
3rd Author's Name Stevanus Arnold
3rd Author's Affiliation Tohoku University(Tohoku Univ.)
4th Author's Name Taiichi Otsuji
4th Author's Affiliation Tohoku University(Tohoku Univ.)
5th Author's Name Yuma Takida
5th Author's Affiliation RIKEN Center for Advanced Photonics(RIKEN)
6th Author's Name Hiroaki Minamide
6th Author's Affiliation RIKEN Center for Advanced Photonics(RIKEN)
7th Author's Name Eiichi Sano
7th Author's Affiliation Hokkaido University(Hokkaido Univ.)
Date 2016-12-19
Paper # ED2016-83
Volume (vol) vol.116
Number (no) ED-375
Page pp.pp.17-22(ED),
#Pages 6
Date of Issue 2016-12-12 (ED)