| Presentation | 2016-12-13 Development of wafer structure and monolithic integrated GaN-μLED driver circuit for large-scale optoelectonic chip Kazuaki Tsuchiyama, Shu Utsuhomiya, Shota Nakagawa, Keisuke Yamane, Hiroto Sekiguchi, Hiroshi Okada, Akihiro Wakahara, |
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| PDF Download Page |  PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | A Si/SiO2/GaN-LED structure was fabricated by surface activated bonding method, and a GaN-µLED driver circuit consisting of a GaN-µLED and a Si-nMOSFET was integrated onto the Si/SiO2/GaN-LED wafer. From a thermal tolerance of Si/SiO2/GaN-LED structure, we found that the high thermal tolerance of a thin top-Si layer on the Si/SiO2/GaN-LED structure allows a monolithic integration process of GaN-based optical devices and Si-integrated circuits. Static characteristics of GaN-µLED and Si-nMOSFET showed typical device performance without critical degradation of either device. A GaN-µLED driver circuit performed over 10 MHz of modulation bandwidth estimated by pulse driving measurement. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | optoelectronic integrated circuit / wafer bonding / GaN-µLED / monolithic integration |
| Paper # | ED2016-73,CPM2016-106,LQE2016-89 |
| Date of Issue | 2016-12-05 (ED, CPM, LQE) |
| Conference Information | |
| Committee | CPM / LQE / ED |
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| Conference Date | 2016/12/12(2days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | Kyoto University |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | Nitride semiconductors, optoelectronic devices, and related materials |
| Chair | Satoru Noge(Numazu National College of Tech.) / Susumu Noda(Kyoto Univ.) / Koichi Maezawa(Univ. of Toyama) |
| Vice Chair | Fumihiko Hirose(Yamagata Univ.) / Tsuyoshi Yamamoto(Fujitsu Labs.) / Kunio Tsuda(Toshiba) |
| Secretary | Fumihiko Hirose(NTT) / Tsuyoshi Yamamoto(Nihon Univ.) / Kunio Tsuda(NTT) |
| Assistant | Takashi Sakamoto(NTT) / Yuichi Nakamura(Toyohashi Univ. of Tech.) / / Masataka Higashiwaki(NICT) / Toshiyuki Oishi(Saga Univ.) |
| Paper Information | |
| Registration To | Technical Committee on Component Parts and Materials / Technical Committee on Lasers and Quantum Electronics / Technical Committee on Electron Devices |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Development of wafer structure and monolithic integrated GaN-μLED driver circuit for large-scale optoelectonic chip |
| Sub Title (in English) | |
| Keyword(1) | optoelectronic integrated circuit |
| Keyword(2) | wafer bonding |
| Keyword(3) | GaN-µLED |
| Keyword(4) | monolithic integration |
| 1st Author's Name | Kazuaki Tsuchiyama |
| 1st Author's Affiliation | Toyohashi University of Technology(Toyohashi Tech.) |
| 2nd Author's Name | Shu Utsuhomiya |
| 2nd Author's Affiliation | Toyohashi University of Technology(Toyohashi Tech.) |
| 3rd Author's Name | Shota Nakagawa |
| 3rd Author's Affiliation | Toyohashi University of Technology(Toyohashi Tech.) |
| 4th Author's Name | Keisuke Yamane |
| 4th Author's Affiliation | Toyohashi University of Technology(Toyohashi Tech.) |
| 5th Author's Name | Hiroto Sekiguchi |
| 5th Author's Affiliation | Toyohashi University of Technology(Toyohashi Tech.) |
| 6th Author's Name | Hiroshi Okada |
| 6th Author's Affiliation | Toyohashi University of Technology(Toyohashi Tech.) |
| 7th Author's Name | Akihiro Wakahara |
| 7th Author's Affiliation | Toyohashi University of Technology(Toyohashi Tech.) |
| Date | 2016-12-13 |
| Paper # | ED2016-73,CPM2016-106,LQE2016-89 |
| Volume (vol) | vol.116 |
| Number (no) | ED-356,CPM-357,LQE-358 |
| Page | pp.pp.79-83(ED), pp.79-83(CPM), pp.79-83(LQE), |
| #Pages | 5 |
| Date of Issue | 2016-12-05 (ED, CPM, LQE) |