| Presentation | 2017-01-27 Growth of GaN thin films by chemical vapor deposition using Ga vapor Kensuke Fukasawa, Tsuyoshi Nagase, Yuichirou Masuda, Tetsuya Kouno, Hiroko Kominami, Hara kazuhiko, |
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| PDF Download Page |  PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | Gallium nitride (GaN) thin films were grown on c-plane sapphire substrates by chemical vapor deposition using Ga vapor and NH3 gas. Low-temperature buffer layer was deposited at a substrate temperature (Tg) of 590 C and a NH3 gas flow rate (F(NH3)) of 1500 sccm, which was followed by the growth of GaN thin films at Tg of 1050~1100 C and F(NH3) of 500~1500 sccm. X-ray diffraction, surface and cross-sectional morphology, and photoluminescence have shown that the film structure and the luminescence property of the GaN thin films depend on Tg and F(NH3). We have found that the flat GaN thin film was grown at Tg of 1100 C and F(NH3) 500 sccm. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | Gallium nitride / Chemical vapor deposition / thin film growth |
| Paper # | EID2016-45 |
| Date of Issue | 2017-01-19 (EID) |
| Conference Information | |
| Committee | EID / ITE-IDY / IEE-EDD / IEIJ-SSL / SID-JC |
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| Conference Date | 2017/1/26(2days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | Tokushima Univ. |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | Joint Meeting of Emissive/Non-emissive Displays |
| Chair | Tomokazu Shiga(Univ. of Electro-Comm.) / Keiichi Betsui(Hitachi) |
| Vice Chair | Mutsumi Kimura(Ryukoku Univ.) / Yuko Kominami(Shizuoka Univ.) / Yoshihide Fujisaki(NHK) |
| Secretary | Mutsumi Kimura(NTT) / Yuko Kominami(Tokyo Inst. of Tech.) / Yoshihide Fujisaki(Shizuoka Univ.) |
| Assistant | Rumiko Yamaguchi(Akita Univ.) / Hiroyuki Nitta(Japan Display) / Mitsuru Nakata(NHK) / Takashi Kojiri(ZEON) / Ryosuke Nonaka(Toshiba) |
| Paper Information | |
| Registration To | Technical Committee on Electronic Information Displays / Technical Group on Information Display / Technical Group on Electron Devices / * / Society for Information Display Japan Chapter |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Growth of GaN thin films by chemical vapor deposition using Ga vapor |
| Sub Title (in English) | |
| Keyword(1) | Gallium nitride |
| Keyword(2) | Chemical vapor deposition |
| Keyword(3) | thin film growth |
| 1st Author's Name | Kensuke Fukasawa |
| 1st Author's Affiliation | Shizuoka University(Shizuoka Univ.) |
| 2nd Author's Name | Tsuyoshi Nagase |
| 2nd Author's Affiliation | Shizuoka University(Shizuoka Univ.) |
| 3rd Author's Name | Yuichirou Masuda |
| 3rd Author's Affiliation | Shizuoka University(Shizuoka Univ.) |
| 4th Author's Name | Tetsuya Kouno |
| 4th Author's Affiliation | Shizuoka University(Shizuoka Univ.) |
| 5th Author's Name | Hiroko Kominami |
| 5th Author's Affiliation | Shizuoka University(Shizuoka Univ.) |
| 6th Author's Name | Hara kazuhiko |
| 6th Author's Affiliation | Shizuoka University(Shizuoka Univ.) |
| Date | 2017-01-27 |
| Paper # | EID2016-45 |
| Volume (vol) | vol.116 |
| Number (no) | EID-430 |
| Page | pp.pp.125-128(EID), |
| #Pages | 4 |
| Date of Issue | 2017-01-19 (EID) |