| Presentation | 2016-12-12 Development of recombination layer in Perovskite/Microcrystalline Si tandem solar cells Song Zhang, Yasuaki Yishikawa, Itaru Raifuku, Tiphaine Bourgeteau, Yukiharu Uraoka, Erik Johnson, Martin Foldyna, Yvan Bonnassieux, Pere Roca i Cabarrocas, |
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| PDF Download Page |  PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | In recent years, the study of tandem solar cells that enable to achieve high efficiency has gathered much attention. The recombination layer between the two types of solar cells is critical issue because of its important role in connecting the solar cells in series. In this study, the junction between a hole-transport layer for perovskite solar cells with a microcrystalline Si (µcSi) layer is investigated as a recombination layer of perovskite/µcSi tandem solar cell. The complex growth of NiO thin films deposited by RF sputtering is first investigated to determine optimum growth conditions to obtain a compact and thin layer of NiO. Then, NiO/(p or n)-µcSi recombination layers are designed and measured. The measured current density of NiO/p-µcSi layer reached 154 mA/cm2 when the applied voltage was over 1.15 V, indicating that NiO/p-µcSi is a promising structure to be used as a recombination layer in perovskite/µcSi tandem solar cells. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | Tandem solar cell / Perovskite / Recombination layer / Hole-transport layer / NiO sputtering |
| Paper # | EID2016-9,SDM2016-90 |
| Date of Issue | 2016-12-05 (EID, SDM) |
| Conference Information | |
| Committee | SDM / EID |
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| Conference Date | 2016/12/12(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | NAIST |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | Fabrication and Evaluation of Silicon Related Materials |
| Chair | Tatsuya Kunikiyo(Renesas) / Tomokazu Shiga(Univ. of Electro-Comm.) |
| Vice Chair | Takahiro Shinada(Tohoku Univ.) / Mutsumi Kimura(Ryukoku Univ.) / Yuko Kominami(Shizuoka Univ.) |
| Secretary | Takahiro Shinada(Tohoku Univ.) / Mutsumi Kimura(Renesas) / Yuko Kominami(NTT) |
| Assistant | Hiroya Ikeda(Shizuoka Univ.) / Rumiko Yamaguchi(Akita Univ.) / Hiroyuki Nitta(Japan Display) / Mitsuru Nakata(NHK) / Takashi Kojiri(ZEON) / Ryosuke Nonaka(Toshiba) |
| Paper Information | |
| Registration To | Technical Committee on Silicon Device and Materials / Technical Committee on Electronic Information Displays |
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| Language | ENG-JTITLE |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Development of recombination layer in Perovskite/Microcrystalline Si tandem solar cells |
| Sub Title (in English) | |
| Keyword(1) | Tandem solar cell |
| Keyword(2) | Perovskite |
| Keyword(3) | Recombination layer |
| Keyword(4) | Hole-transport layer |
| Keyword(5) | NiO sputtering |
| 1st Author's Name | Song Zhang |
| 1st Author's Affiliation | Nara Institute of Science and Technology(NAIST) |
| 2nd Author's Name | Yasuaki Yishikawa |
| 2nd Author's Affiliation | Nara Institute of Science and Technology(NAIST) |
| 3rd Author's Name | Itaru Raifuku |
| 3rd Author's Affiliation | Nara Institute of Science and Technology(NAIST) |
| 4th Author's Name | Tiphaine Bourgeteau |
| 4th Author's Affiliation | Nara Institute of Science and Technology(NAIST) |
| 5th Author's Name | Yukiharu Uraoka |
| 5th Author's Affiliation | Nara Institute of Science and Technology(NAIST) |
| 6th Author's Name | Erik Johnson |
| 6th Author's Affiliation | Ecole polytechnique(Ecole polytechnique) |
| 7th Author's Name | Martin Foldyna |
| 7th Author's Affiliation | Ecole polytechnique(Ecole polytechnique) |
| 8th Author's Name | Yvan Bonnassieux |
| 8th Author's Affiliation | Ecole polytechnique(Ecole polytechnique) |
| 9th Author's Name | Pere Roca i Cabarrocas |
| 9th Author's Affiliation | Ecole polytechnique(Ecole polytechnique) |
| Date | 2016-12-12 |
| Paper # | EID2016-9,SDM2016-90 |
| Volume (vol) | vol.116 |
| Number (no) | EID-354,SDM-355 |
| Page | pp.pp.1-6(EID), pp.1-6(SDM), |
| #Pages | 6 |
| Date of Issue | 2016-12-05 (EID, SDM) |