| Presentation | 2016-12-13 Development of Highly Effective Deep-Ultraviolet Light-Emitting Diode by using Transparent p-AlGaN Contact Layer Takuya Mino, Hideki Hirayama, Takayoshi Takano, Koji Goto, Mitsuhiko Ueda, Kenji Tsubaki, |
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| PDF Download Page |  PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | AlGaN-based deep-ultraviolet (DUV) light emitting diodes (LEDs) with emission wavelength of 270 - 280 nm have been attracting much attention as an alternative to conventional mercury lamp. In spite of previous studies, however, the external quantum efficiency (EQE) of the DUV-LEDs remains much lower than that of visible LEDs owing to low light extraction from LED chips. We demonstrated the highly effective DUV-LEDs with the external quantum efficiency (EQE) of over 10% at 20 mA cw current by improving the light extraction by using DUV transparent p-contact layer and DUV reflective metal contact. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | DUV-LED / p-AlGaN / reflective electrode |
| Paper # | ED2016-72,CPM2016-105,LQE2016-88 |
| Date of Issue | 2016-12-05 (ED, CPM, LQE) |
| Conference Information | |
| Committee | CPM / LQE / ED |
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| Conference Date | 2016/12/12(2days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | Kyoto University |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | Nitride semiconductors, optoelectronic devices, and related materials |
| Chair | Satoru Noge(Numazu National College of Tech.) / Susumu Noda(Kyoto Univ.) / Koichi Maezawa(Univ. of Toyama) |
| Vice Chair | Fumihiko Hirose(Yamagata Univ.) / Tsuyoshi Yamamoto(Fujitsu Labs.) / Kunio Tsuda(Toshiba) |
| Secretary | Fumihiko Hirose(NTT) / Tsuyoshi Yamamoto(Nihon Univ.) / Kunio Tsuda(NTT) |
| Assistant | Takashi Sakamoto(NTT) / Yuichi Nakamura(Toyohashi Univ. of Tech.) / / Masataka Higashiwaki(NICT) / Toshiyuki Oishi(Saga Univ.) |
| Paper Information | |
| Registration To | Technical Committee on Component Parts and Materials / Technical Committee on Lasers and Quantum Electronics / Technical Committee on Electron Devices |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Development of Highly Effective Deep-Ultraviolet Light-Emitting Diode by using Transparent p-AlGaN Contact Layer |
| Sub Title (in English) | |
| Keyword(1) | DUV-LED |
| Keyword(2) | p-AlGaN |
| Keyword(3) | reflective electrode |
| 1st Author's Name | Takuya Mino |
| 1st Author's Affiliation | Panasonic Corporation(Panasonic) |
| 2nd Author's Name | Hideki Hirayama |
| 2nd Author's Affiliation | RIKEN(RIKEN) |
| 3rd Author's Name | Takayoshi Takano |
| 3rd Author's Affiliation | Panasonic Corporation(Panasonic) |
| 4th Author's Name | Koji Goto |
| 4th Author's Affiliation | Panasonic Corporation(Panasonic) |
| 5th Author's Name | Mitsuhiko Ueda |
| 5th Author's Affiliation | Panasonic Corporation(Panasonic) |
| 6th Author's Name | Kenji Tsubaki |
| 6th Author's Affiliation | Panasonic Corporation(Panasonic) |
| Date | 2016-12-13 |
| Paper # | ED2016-72,CPM2016-105,LQE2016-88 |
| Volume (vol) | vol.116 |
| Number (no) | ED-356,CPM-357,LQE-358 |
| Page | pp.pp.75-78(ED), pp.75-78(CPM), pp.75-78(LQE), |
| #Pages | 4 |
| Date of Issue | 2016-12-05 (ED, CPM, LQE) |