Presentation | 2016-12-19 Improvement of light receiving efficiency of Asymmetric-Dual-Grating-Gate High-Electron-Mobility-Transistor by series array and lens integration Tomotaka Hosotani, Fuzuki Kasuya, Hiroki Taniguchi, Takayuki Watanabe, Tetsuya Suemitsu, Taiichi Otsuji, Yuma Takida, Hiromasa Ito, Hiroaki Minamide, Tadao Ishibashi, Makoto Shimizu, Akira Satou, |
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PDF Download Page | PDF download Page Link |
Abstract(in Japanese) | (See Japanese page) |
Abstract(in English) | Asymmetric-dual-grating-gate high-electron-mobility-transistors (ADGG-HEMTs) are expected for room-temperature operating, high-speed THz detectors. However, their low light receiving efficiency is one of serious concerns because the focused spot size of free space THz wave is much smaller than the active area of ADGG-HEMTs. To improve this, we examine 1) increasing the effective active area by implementing series array of detectors and 2) shrinking the spot size by integrating a detector with a hyper-hemispherical silicon lens. We report the 4-fold enhancement of responsivity by series array of 4 detectors and the 6-fold enhancement by the silicon lens integration. Also, we discuss the frequency characteristics on silicon lens module. |
Keyword(in Japanese) | (See Japanese page) |
Keyword(in English) | HEMT / Plasmon / THz detector / array / Si lens |
Paper # | ED2016-84 |
Date of Issue | 2016-12-12 (ED) |
Conference Information | |
Committee | ED |
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Conference Date | 2016/12/19(2days) |
Place (in Japanese) | (See Japanese page) |
Place (in English) | RIEC, Tohoku Univ |
Topics (in Japanese) | (See Japanese page) |
Topics (in English) | Millimeter-wave, terahertz-wave devices and systems |
Chair | Koichi Maezawa(Univ. of Toyama) |
Vice Chair | Kunio Tsuda(Toshiba) |
Secretary | Kunio Tsuda(JAIST) |
Assistant | Masataka Higashiwaki(NICT) / Toshiyuki Oishi(Saga Univ.) |
Paper Information | |
Registration To | Technical Committee on Electron Devices |
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Language | JPN |
Title (in Japanese) | (See Japanese page) |
Sub Title (in Japanese) | (See Japanese page) |
Title (in English) | Improvement of light receiving efficiency of Asymmetric-Dual-Grating-Gate High-Electron-Mobility-Transistor by series array and lens integration |
Sub Title (in English) | |
Keyword(1) | HEMT |
Keyword(2) | Plasmon |
Keyword(3) | THz detector |
Keyword(4) | array |
Keyword(5) | Si lens |
1st Author's Name | Tomotaka Hosotani |
1st Author's Affiliation | Tohoku University(Tohoku Univ.) |
2nd Author's Name | Fuzuki Kasuya |
2nd Author's Affiliation | Tohoku University(Tohoku Univ.) |
3rd Author's Name | Hiroki Taniguchi |
3rd Author's Affiliation | Tohoku University(Tohoku Univ.) |
4th Author's Name | Takayuki Watanabe |
4th Author's Affiliation | Tohoku University(Tohoku Univ.) |
5th Author's Name | Tetsuya Suemitsu |
5th Author's Affiliation | Tohoku University(Tohoku Univ.) |
6th Author's Name | Taiichi Otsuji |
6th Author's Affiliation | Tohoku University(Tohoku Univ.) |
7th Author's Name | Yuma Takida |
7th Author's Affiliation | RIKEN(RIKEN) |
8th Author's Name | Hiromasa Ito |
8th Author's Affiliation | RIKEN(RIKEN) |
9th Author's Name | Hiroaki Minamide |
9th Author's Affiliation | RIKEN(RIKEN) |
10th Author's Name | Tadao Ishibashi |
10th Author's Affiliation | NTT Electronics Techno(NTT Electronics Techno) |
11th Author's Name | Makoto Shimizu |
11th Author's Affiliation | NTT Electronics(NEL) |
12th Author's Name | Akira Satou |
12th Author's Affiliation | Tohoku University(Tohoku Univ.) |
Date | 2016-12-19 |
Paper # | ED2016-84 |
Volume (vol) | vol.116 |
Number (no) | ED-375 |
Page | pp.pp.23-28(ED), |
#Pages | 6 |
Date of Issue | 2016-12-12 (ED) |