Presentation 2016-12-19
Improvement of light receiving efficiency of Asymmetric-Dual-Grating-Gate High-Electron-Mobility-Transistor by series array and lens integration
Tomotaka Hosotani, Fuzuki Kasuya, Hiroki Taniguchi, Takayuki Watanabe, Tetsuya Suemitsu, Taiichi Otsuji, Yuma Takida, Hiromasa Ito, Hiroaki Minamide, Tadao Ishibashi, Makoto Shimizu, Akira Satou,
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Abstract(in Japanese) (See Japanese page)
Abstract(in English) Asymmetric-dual-grating-gate high-electron-mobility-transistors (ADGG-HEMTs) are expected for room-temperature operating, high-speed THz detectors. However, their low light receiving efficiency is one of serious concerns because the focused spot size of free space THz wave is much smaller than the active area of ADGG-HEMTs. To improve this, we examine 1) increasing the effective active area by implementing series array of detectors and 2) shrinking the spot size by integrating a detector with a hyper-hemispherical silicon lens. We report the 4-fold enhancement of responsivity by series array of 4 detectors and the 6-fold enhancement by the silicon lens integration. Also, we discuss the frequency characteristics on silicon lens module.
Keyword(in Japanese) (See Japanese page)
Keyword(in English) HEMT / Plasmon / THz detector / array / Si lens
Paper # ED2016-84
Date of Issue 2016-12-12 (ED)

Conference Information
Committee ED
Conference Date 2016/12/19(2days)
Place (in Japanese) (See Japanese page)
Place (in English) RIEC, Tohoku Univ
Topics (in Japanese) (See Japanese page)
Topics (in English) Millimeter-wave, terahertz-wave devices and systems
Chair Koichi Maezawa(Univ. of Toyama)
Vice Chair Kunio Tsuda(Toshiba)
Secretary Kunio Tsuda(JAIST)
Assistant Masataka Higashiwaki(NICT) / Toshiyuki Oishi(Saga Univ.)

Paper Information
Registration To Technical Committee on Electron Devices
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) Improvement of light receiving efficiency of Asymmetric-Dual-Grating-Gate High-Electron-Mobility-Transistor by series array and lens integration
Sub Title (in English)
Keyword(1) HEMT
Keyword(2) Plasmon
Keyword(3) THz detector
Keyword(4) array
Keyword(5) Si lens
1st Author's Name Tomotaka Hosotani
1st Author's Affiliation Tohoku University(Tohoku Univ.)
2nd Author's Name Fuzuki Kasuya
2nd Author's Affiliation Tohoku University(Tohoku Univ.)
3rd Author's Name Hiroki Taniguchi
3rd Author's Affiliation Tohoku University(Tohoku Univ.)
4th Author's Name Takayuki Watanabe
4th Author's Affiliation Tohoku University(Tohoku Univ.)
5th Author's Name Tetsuya Suemitsu
5th Author's Affiliation Tohoku University(Tohoku Univ.)
6th Author's Name Taiichi Otsuji
6th Author's Affiliation Tohoku University(Tohoku Univ.)
7th Author's Name Yuma Takida
7th Author's Affiliation RIKEN(RIKEN)
8th Author's Name Hiromasa Ito
8th Author's Affiliation RIKEN(RIKEN)
9th Author's Name Hiroaki Minamide
9th Author's Affiliation RIKEN(RIKEN)
10th Author's Name Tadao Ishibashi
10th Author's Affiliation NTT Electronics Techno(NTT Electronics Techno)
11th Author's Name Makoto Shimizu
11th Author's Affiliation NTT Electronics(NEL)
12th Author's Name Akira Satou
12th Author's Affiliation Tohoku University(Tohoku Univ.)
Date 2016-12-19
Paper # ED2016-84
Volume (vol) vol.116
Number (no) ED-375
Page pp.pp.23-28(ED),
#Pages 6
Date of Issue 2016-12-12 (ED)