| Presentation | 2016-12-16 Large Signal GaN HEMT Device Model for Accurate RF Power Rectifier Simulation Tsukasa Yasui, Ryo Ishikawa, Kazuhiko Honjo, |
|---|---|
| PDF Download Page |  PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | |
| Paper # | MW2016-166 |
| Date of Issue | 2016-12-08 (MW) |
| Conference Information | |
| Committee | MW |
|---|---|
| Conference Date | 2016/12/15(2days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | National Defense Academy |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | Students Session / Microwave Technologies |
| Chair | Yohei Ishikawa(Kyoto Univ.) |
| Vice Chair | Takao Kuki(Kokushikan Univ.) / Kenjiro Nishikawa(Kagoshima Univ.) / Kenichi Tajima(Mitsubishi Electric) |
| Secretary | Takao Kuki(Panasonic) / Kenjiro Nishikawa(Tokyo Inst. of Tech.) / Kenichi Tajima |
| Assistant | Naoto Sekiya(Univ. of Yamanashi) / Satoshi Ono(Univ. of Electro-Comm.) |
| Paper Information | |
| Registration To | Technical Committee on Microwaves |
|---|---|
| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Large Signal GaN HEMT Device Model for Accurate RF Power Rectifier Simulation |
| Sub Title (in English) | |
| Keyword(1) | |
| Keyword(2) | |
| Keyword(3) | |
| Keyword(4) | |
| 1st Author's Name | Tsukasa Yasui |
| 1st Author's Affiliation | The University of Electro-Communications(UEC) |
| 2nd Author's Name | Ryo Ishikawa |
| 2nd Author's Affiliation | The University of Electro-Communications(UEC) |
| 3rd Author's Name | Kazuhiko Honjo |
| 3rd Author's Affiliation | The University of Electro-Communications(UEC) |
| Date | 2016-12-16 |
| Paper # | MW2016-166 |
| Volume (vol) | vol.116 |
| Number (no) | MW-363 |
| Page | pp.pp.195-198(MW), |
| #Pages | 4 |
| Date of Issue | 2016-12-08 (MW) |