| Presentation | 2016-12-13 Crystal growth of bulk AlN by a clean process Katsuhiro Kishimoto, Wu PeiTsen, Mitsuru Funato, Yoichi Kawakami, |
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| PDF Download Page |  PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | We have proposed Elementary source Vapor Phase Epitaxy (EVPE) as a new AlN bulk growth method, which is a simple and clean method using Al and N2 as precursors. When AlN is grown on sapphire using the EVPE method, voids are formed at the AlN/sapphire interface, which assists the growth of crack-free AlN thick films (18 μm). This report shows that the state of the interface including these voids can be controlled via the supply timing of N2. If excessive voids are formed, self-separation is also possible, suggesting the elimination of the substrate-removal process when bulk AlN is fabricated in the future. Comparison of crack-free AlN on sapphire and self-separating AlN shows that strain due to thermal stress remains in the former, and is almost relaxed in the latter. Moreover, the dislocation densities decrease as the thickness increases. This is probably because high density dislocations near the AlN/sapphire interface terminate each other by a lateral growth across voids at the initial growth stage． |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | AlN / Bulk / EVPE / Self-separation |
| Paper # | ED2016-71,CPM2016-104,LQE2016-87 |
| Date of Issue | 2016-12-05 (ED, CPM, LQE) |
| Conference Information | |
| Committee | CPM / LQE / ED |
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| Conference Date | 2016/12/12(2days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | Kyoto University |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | Nitride semiconductors, optoelectronic devices, and related materials |
| Chair | Satoru Noge(Numazu National College of Tech.) / Susumu Noda(Kyoto Univ.) / Koichi Maezawa(Univ. of Toyama) |
| Vice Chair | Fumihiko Hirose(Yamagata Univ.) / Tsuyoshi Yamamoto(Fujitsu Labs.) / Kunio Tsuda(Toshiba) |
| Secretary | Fumihiko Hirose(NTT) / Tsuyoshi Yamamoto(Nihon Univ.) / Kunio Tsuda(NTT) |
| Assistant | Takashi Sakamoto(NTT) / Yuichi Nakamura(Toyohashi Univ. of Tech.) / / Masataka Higashiwaki(NICT) / Toshiyuki Oishi(Saga Univ.) |
| Paper Information | |
| Registration To | Technical Committee on Component Parts and Materials / Technical Committee on Lasers and Quantum Electronics / Technical Committee on Electron Devices |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Crystal growth of bulk AlN by a clean process |
| Sub Title (in English) | |
| Keyword(1) | AlN |
| Keyword(2) | Bulk |
| Keyword(3) | EVPE |
| Keyword(4) | Self-separation |
| 1st Author's Name | Katsuhiro Kishimoto |
| 1st Author's Affiliation | Kyoto University(Kyoto Univ.) |
| 2nd Author's Name | Wu PeiTsen |
| 2nd Author's Affiliation | Kyoto University(Kyoto Univ.) |
| 3rd Author's Name | Mitsuru Funato |
| 3rd Author's Affiliation | Kyoto University(Kyoto Univ.) |
| 4th Author's Name | Yoichi Kawakami |
| 4th Author's Affiliation | Kyoto University(Kyoto Univ.) |
| Date | 2016-12-13 |
| Paper # | ED2016-71,CPM2016-104,LQE2016-87 |
| Volume (vol) | vol.116 |
| Number (no) | ED-356,CPM-357,LQE-358 |
| Page | pp.pp.71-74(ED), pp.71-74(CPM), pp.71-74(LQE), |
| #Pages | 4 |
| Date of Issue | 2016-12-05 (ED, CPM, LQE) |