| Presentation | 2016-12-12 Study of the inverter circuit of DNA/Si-MOSFET due to the parasitic capacitance control Hibiki Nakano, Matsuo Naoto, Akira Heya, Tadao Takada, Kazusige Yamana, Tadashi Sato, Shin Yokoyama, |
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| PDF Download Page |  PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | An input/output characteristics of the inverter composed of the DNA/Si-MOSFET and the parasitic capacity was studied. The DNA was bridged between the Si electrodes those serve as the source and drain with the 120nm-gap-length. At VDD = 0 V and VDD = 3V, the output characteristic was almost the same. The remain of this phenomenon is that the space charge layer of the DNA/Si-MOSFET charge due to the charge capture and emission and the parasitic capacitance charge synchronized with the gate voltage. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | DNA/Si-MOSFET / inverter |
| Paper # | EID2016-23,SDM2016-104 |
| Date of Issue | 2016-12-05 (EID, SDM) |
| Conference Information | |
| Committee | SDM / EID |
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| Conference Date | 2016/12/12(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | NAIST |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | Fabrication and Evaluation of Silicon Related Materials |
| Chair | Tatsuya Kunikiyo(Renesas) / Tomokazu Shiga(Univ. of Electro-Comm.) |
| Vice Chair | Takahiro Shinada(Tohoku Univ.) / Mutsumi Kimura(Ryukoku Univ.) / Yuko Kominami(Shizuoka Univ.) |
| Secretary | Takahiro Shinada(Tohoku Univ.) / Mutsumi Kimura(Renesas) / Yuko Kominami(NTT) |
| Assistant | Hiroya Ikeda(Shizuoka Univ.) / Rumiko Yamaguchi(Akita Univ.) / Hiroyuki Nitta(Japan Display) / Mitsuru Nakata(NHK) / Takashi Kojiri(ZEON) / Ryosuke Nonaka(Toshiba) |
| Paper Information | |
| Registration To | Technical Committee on Silicon Device and Materials / Technical Committee on Electronic Information Displays |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Study of the inverter circuit of DNA/Si-MOSFET due to the parasitic capacitance control |
| Sub Title (in English) | |
| Keyword(1) | DNA/Si-MOSFET |
| Keyword(2) | inverter |
| 1st Author's Name | Hibiki Nakano |
| 1st Author's Affiliation | University of Hyogo(Univ. of Hyogo) |
| 2nd Author's Name | Matsuo Naoto |
| 2nd Author's Affiliation | University of Hyogo(Univ. of Hyogo) |
| 3rd Author's Name | Akira Heya |
| 3rd Author's Affiliation | University of Hyogo(Univ. of Hyogo) |
| 4th Author's Name | Tadao Takada |
| 4th Author's Affiliation | University of Hyogo(Univ. of Hyogo) |
| 5th Author's Name | Kazusige Yamana |
| 5th Author's Affiliation | University of Hyogo(Univ. of Hyogo) |
| 6th Author's Name | Tadashi Sato |
| 6th Author's Affiliation | Hiroshima University(Univ. Hiroshima) |
| 7th Author's Name | Shin Yokoyama |
| 7th Author's Affiliation | Hiroshima University(Univ. Hiroshima) |
| Date | 2016-12-12 |
| Paper # | EID2016-23,SDM2016-104 |
| Volume (vol) | vol.116 |
| Number (no) | EID-354,SDM-355 |
| Page | pp.pp.63-66(EID), pp.63-66(SDM), |
| #Pages | 4 |
| Date of Issue | 2016-12-05 (EID, SDM) |