Presentation 2016-12-15
[Poster Presentation] Error Analysis of NAND Flash Memories for Long-Term Storage
Kyoji Mizoguchi, Tomonori Takahashi, Seiichi Aritome, Ken Takeuchi,
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Abstract(in Japanese) (See Japanese page)
Abstract(in English) Recently, a digital data on art, culture and history which required data-retention (DR) time from 10 to 100 years or more has been rapidly increased. NAND flash memory is expected as one of long-term data storage devices. In NAND flash memory, the reliability trade-off exists between DR time and write/erase (W/E) cycles. Therefore, to achieve long-term DR, W/E cycles are restricted. In addition, the error tendency depends on the retention temperature and W/E cycles. This paper investigated the error tendency on different retention condition in Triple-level cell (TLC, 3bit /cell) NAND flash memory which is applied low W/E cycles.
Keyword(in Japanese) (See Japanese page)
Keyword(in English) NAND flash memory / archive
Paper # ICD2016-72,CPSY2016-78
Date of Issue 2016-12-08 (ICD, CPSY)

Conference Information
Committee ICD / CPSY
Conference Date 2016/12/15(2days)
Place (in Japanese) (See Japanese page)
Place (in English) Tokyo Institute of Technology
Topics (in Japanese) (See Japanese page)
Topics (in English)
Chair Minoru Fujishima(Hiroshima Univ.) / Yasuhiko Nakashima(NAIST)
Vice Chair Hideto Hidaka(Renesas) / Koji Nakano(Hiroshima Univ.) / Hidetsugu Irie(Univ. of Tokyo)
Secretary Hideto Hidaka(Hiroshima Univ.) / Koji Nakano(Univ. of Tokyo) / Hidetsugu Irie(Fujitsu Labs.)
Assistant Takashi Hashimoto(Panasonic) / Masanori Natsui(Tohoku Univ.) / Hiroyuki Ito(Tokyo Inst. of Tech.) / Pham Konkuha(Univ. of Electro-Comm.) / Takeshi Ohkawa(Utsunomiya Univ.) / Shinya Takameda(Hokkaido Univ.)

Paper Information
Registration To Technical Committee on Integrated Circuits and Devices / Technical Committee on Computer Systems
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) [Poster Presentation] Error Analysis of NAND Flash Memories for Long-Term Storage
Sub Title (in English)
Keyword(1) NAND flash memory
Keyword(2) archive
1st Author's Name Kyoji Mizoguchi
1st Author's Affiliation Chuo University(Chuo Univ.)
2nd Author's Name Tomonori Takahashi
2nd Author's Affiliation Chuo University(Chuo Univ.)
3rd Author's Name Seiichi Aritome
3rd Author's Affiliation Chuo University(Chuo Univ.)
4th Author's Name Ken Takeuchi
4th Author's Affiliation Chuo University(Chuo Univ.)
Date 2016-12-15
Paper # ICD2016-72,CPSY2016-78
Volume (vol) vol.116
Number (no) ICD-364,CPSY-365
Page pp.pp.63-63(ICD), pp.63-63(CPSY),
#Pages 1
Date of Issue 2016-12-08 (ICD, CPSY)