Presentation | 2016-12-15 [Poster Presentation] Error Analysis of NAND Flash Memories for Long-Term Storage Kyoji Mizoguchi, Tomonori Takahashi, Seiichi Aritome, Ken Takeuchi, |
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PDF Download Page | PDF download Page Link |
Abstract(in Japanese) | (See Japanese page) |
Abstract(in English) | Recently, a digital data on art, culture and history which required data-retention (DR) time from 10 to 100 years or more has been rapidly increased. NAND flash memory is expected as one of long-term data storage devices. In NAND flash memory, the reliability trade-off exists between DR time and write/erase (W/E) cycles. Therefore, to achieve long-term DR, W/E cycles are restricted. In addition, the error tendency depends on the retention temperature and W/E cycles. This paper investigated the error tendency on different retention condition in Triple-level cell (TLC, 3bit /cell) NAND flash memory which is applied low W/E cycles. |
Keyword(in Japanese) | (See Japanese page) |
Keyword(in English) | NAND flash memory / archive |
Paper # | ICD2016-72,CPSY2016-78 |
Date of Issue | 2016-12-08 (ICD, CPSY) |
Conference Information | |
Committee | ICD / CPSY |
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Conference Date | 2016/12/15(2days) |
Place (in Japanese) | (See Japanese page) |
Place (in English) | Tokyo Institute of Technology |
Topics (in Japanese) | (See Japanese page) |
Topics (in English) | |
Chair | Minoru Fujishima(Hiroshima Univ.) / Yasuhiko Nakashima(NAIST) |
Vice Chair | Hideto Hidaka(Renesas) / Koji Nakano(Hiroshima Univ.) / Hidetsugu Irie(Univ. of Tokyo) |
Secretary | Hideto Hidaka(Hiroshima Univ.) / Koji Nakano(Univ. of Tokyo) / Hidetsugu Irie(Fujitsu Labs.) |
Assistant | Takashi Hashimoto(Panasonic) / Masanori Natsui(Tohoku Univ.) / Hiroyuki Ito(Tokyo Inst. of Tech.) / Pham Konkuha(Univ. of Electro-Comm.) / Takeshi Ohkawa(Utsunomiya Univ.) / Shinya Takameda(Hokkaido Univ.) |
Paper Information | |
Registration To | Technical Committee on Integrated Circuits and Devices / Technical Committee on Computer Systems |
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Language | JPN |
Title (in Japanese) | (See Japanese page) |
Sub Title (in Japanese) | (See Japanese page) |
Title (in English) | [Poster Presentation] Error Analysis of NAND Flash Memories for Long-Term Storage |
Sub Title (in English) | |
Keyword(1) | NAND flash memory |
Keyword(2) | archive |
1st Author's Name | Kyoji Mizoguchi |
1st Author's Affiliation | Chuo University(Chuo Univ.) |
2nd Author's Name | Tomonori Takahashi |
2nd Author's Affiliation | Chuo University(Chuo Univ.) |
3rd Author's Name | Seiichi Aritome |
3rd Author's Affiliation | Chuo University(Chuo Univ.) |
4th Author's Name | Ken Takeuchi |
4th Author's Affiliation | Chuo University(Chuo Univ.) |
Date | 2016-12-15 |
Paper # | ICD2016-72,CPSY2016-78 |
Volume (vol) | vol.116 |
Number (no) | ICD-364,CPSY-365 |
Page | pp.pp.63-63(ICD), pp.63-63(CPSY), |
#Pages | 1 |
Date of Issue | 2016-12-08 (ICD, CPSY) |