Presentation | 2016-12-15 [Poster Presentation] Error Tendency Analysis of Endurance in ReRAM Shouhei Fukuyama, Kazuki Maeda, Ken Takeuchi, |
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PDF Download Page | PDF download Page Link |
Abstract(in Japanese) | (See Japanese page) |
Abstract(in English) | Resistive random access memory (ReRAM) attracts attention as one of the storage class memory (SCM) because of its high speed and low power consumption. ReRAM is non-volatile memory, and the resistance value is changed by forming and dissolving the filament. Data ”1” is low resistance state, data ”0” is high resistance state. Forming and dissolving the filament becomes difficult by a lot of writing of “1” or “0” in ReRAM and an error occurs. In this paper, the error tendency is analyzed for the purpose of improving the endurance of ReRAM. |
Keyword(in Japanese) | (See Japanese page) |
Keyword(in English) | ReRAM / reliability |
Paper # | ICD2016-70,CPSY2016-76 |
Date of Issue | 2016-12-08 (ICD, CPSY) |
Conference Information | |
Committee | ICD / CPSY |
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Conference Date | 2016/12/15(2days) |
Place (in Japanese) | (See Japanese page) |
Place (in English) | Tokyo Institute of Technology |
Topics (in Japanese) | (See Japanese page) |
Topics (in English) | |
Chair | Minoru Fujishima(Hiroshima Univ.) / Yasuhiko Nakashima(NAIST) |
Vice Chair | Hideto Hidaka(Renesas) / Koji Nakano(Hiroshima Univ.) / Hidetsugu Irie(Univ. of Tokyo) |
Secretary | Hideto Hidaka(Hiroshima Univ.) / Koji Nakano(Univ. of Tokyo) / Hidetsugu Irie(Fujitsu Labs.) |
Assistant | Takashi Hashimoto(Panasonic) / Masanori Natsui(Tohoku Univ.) / Hiroyuki Ito(Tokyo Inst. of Tech.) / Pham Konkuha(Univ. of Electro-Comm.) / Takeshi Ohkawa(Utsunomiya Univ.) / Shinya Takameda(Hokkaido Univ.) |
Paper Information | |
Registration To | Technical Committee on Integrated Circuits and Devices / Technical Committee on Computer Systems |
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Language | JPN |
Title (in Japanese) | (See Japanese page) |
Sub Title (in Japanese) | (See Japanese page) |
Title (in English) | [Poster Presentation] Error Tendency Analysis of Endurance in ReRAM |
Sub Title (in English) | |
Keyword(1) | ReRAM |
Keyword(2) | reliability |
1st Author's Name | Shouhei Fukuyama |
1st Author's Affiliation | Chuo University(Chuo Univ.) |
2nd Author's Name | Kazuki Maeda |
2nd Author's Affiliation | Chuo University(Chuo Univ.) |
3rd Author's Name | Ken Takeuchi |
3rd Author's Affiliation | Chuo University(Chuo Univ.) |
Date | 2016-12-15 |
Paper # | ICD2016-70,CPSY2016-76 |
Volume (vol) | vol.116 |
Number (no) | ICD-364,CPSY-365 |
Page | pp.pp.59-59(ICD), pp.59-59(CPSY), |
#Pages | 1 |
Date of Issue | 2016-12-08 (ICD, CPSY) |