Presentation 2016-12-15
[Poster Presentation] Error Pattern Analysis among Scaled Generations of NAND Flash Memories
Yukiya Sakaki, Yusuke Yamaga, Ken Takeuchi,
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Abstract(in Japanese) (See Japanese page)
Abstract(in English) The capacity of NAND flash memory can be expanded by memory cell scaling. However, bit-errors are increased by memory cell scaling and reliability of NAND flash memory is decreased. NAND flash memory can store the data by injection electrons into the floating-gate. However, due to increases of inter-cell coupling noise and decreases of injection electrons, changes of VTH become remarkable by memory cell scaling. As a result, read-disturb error, program-disturb error, and data-retention error are occurred. This paper analyzes error pattern of some generations of NAND flash memory with various Write/Erase cycle and data-retention time.
Keyword(in Japanese) (See Japanese page)
Keyword(in English) NAND flash memory / solid-state-drive / basic properties
Paper # ICD2016-69,CPSY2016-75
Date of Issue 2016-12-08 (ICD, CPSY)

Conference Information
Committee ICD / CPSY
Conference Date 2016/12/15(2days)
Place (in Japanese) (See Japanese page)
Place (in English) Tokyo Institute of Technology
Topics (in Japanese) (See Japanese page)
Topics (in English)
Chair Minoru Fujishima(Hiroshima Univ.) / Yasuhiko Nakashima(NAIST)
Vice Chair Hideto Hidaka(Renesas) / Koji Nakano(Hiroshima Univ.) / Hidetsugu Irie(Univ. of Tokyo)
Secretary Hideto Hidaka(Hiroshima Univ.) / Koji Nakano(Univ. of Tokyo) / Hidetsugu Irie(Fujitsu Labs.)
Assistant Takashi Hashimoto(Panasonic) / Masanori Natsui(Tohoku Univ.) / Hiroyuki Ito(Tokyo Inst. of Tech.) / Pham Konkuha(Univ. of Electro-Comm.) / Takeshi Ohkawa(Utsunomiya Univ.) / Shinya Takameda(Hokkaido Univ.)

Paper Information
Registration To Technical Committee on Integrated Circuits and Devices / Technical Committee on Computer Systems
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) [Poster Presentation] Error Pattern Analysis among Scaled Generations of NAND Flash Memories
Sub Title (in English)
Keyword(1) NAND flash memory
Keyword(2) solid-state-drive
Keyword(3) basic properties
1st Author's Name Yukiya Sakaki
1st Author's Affiliation Chuo University(Chuo Univ.)
2nd Author's Name Yusuke Yamaga
2nd Author's Affiliation Chuo University(Chuo Univ.)
3rd Author's Name Ken Takeuchi
3rd Author's Affiliation Chuo University(Chuo Univ.)
Date 2016-12-15
Paper # ICD2016-69,CPSY2016-75
Volume (vol) vol.116
Number (no) ICD-364,CPSY-365
Page pp.pp.57-57(ICD), pp.57-57(CPSY),
#Pages 1
Date of Issue 2016-12-08 (ICD, CPSY)