| Presentation | 2016-12-15 [Poster Presentation] High-Speed Operation of Program Voltage Generator for Low-voltage ReRAM Kenta Suzuki, Masahiro Tanaka, Kota Tsurumi, Ken Takeuchi, |
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| PDF Download Page |  PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | Resistive random access memory (ReRAM) is considered as one of the next generation non-volatile memories due to its high-speed program and low power consumption. By applying the program voltage, size of conductive filament is changed and ReRAM cell resistance is switched between high resistance state and low resistance state. Because the ReRAM program voltage is larger than the supply voltage of controller circuit, ReRAM program voltage generator is required. The ReRAM program voltage generator should have fast rising time and high current drivability for high-speed program operation. This paper investigates high-speed operation of ReRAM program voltage generator. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | ReRAM / Program voltage generator / High-speed operation |
| Paper # | ICD2016-67,CPSY2016-73 |
| Date of Issue | 2016-12-08 (ICD, CPSY) |
| Conference Information | |
| Committee | ICD / CPSY |
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| Conference Date | 2016/12/15(2days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | Tokyo Institute of Technology |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
| Chair | Minoru Fujishima(Hiroshima Univ.) / Yasuhiko Nakashima(NAIST) |
| Vice Chair | Hideto Hidaka(Renesas) / Koji Nakano(Hiroshima Univ.) / Hidetsugu Irie(Univ. of Tokyo) |
| Secretary | Hideto Hidaka(Hiroshima Univ.) / Koji Nakano(Univ. of Tokyo) / Hidetsugu Irie(Fujitsu Labs.) |
| Assistant | Takashi Hashimoto(Panasonic) / Masanori Natsui(Tohoku Univ.) / Hiroyuki Ito(Tokyo Inst. of Tech.) / Pham Konkuha(Univ. of Electro-Comm.) / Takeshi Ohkawa(Utsunomiya Univ.) / Shinya Takameda(Hokkaido Univ.) |
| Paper Information | |
| Registration To | Technical Committee on Integrated Circuits and Devices / Technical Committee on Computer Systems |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | [Poster Presentation] High-Speed Operation of Program Voltage Generator for Low-voltage ReRAM |
| Sub Title (in English) | |
| Keyword(1) | ReRAM |
| Keyword(2) | Program voltage generator |
| Keyword(3) | High-speed operation |
| 1st Author's Name | Kenta Suzuki |
| 1st Author's Affiliation | Chuo University(Chuo Univ.) |
| 2nd Author's Name | Masahiro Tanaka |
| 2nd Author's Affiliation | Chuo University(Chuo Univ.) |
| 3rd Author's Name | Kota Tsurumi |
| 3rd Author's Affiliation | Chuo University(Chuo Univ.) |
| 4th Author's Name | Ken Takeuchi |
| 4th Author's Affiliation | Chuo University(Chuo Univ.) |
| Date | 2016-12-15 |
| Paper # | ICD2016-67,CPSY2016-73 |
| Volume (vol) | vol.116 |
| Number (no) | ICD-364,CPSY-365 |
| Page | pp.pp.53-53(ICD), pp.53-53(CPSY), |
| #Pages | 1 |
| Date of Issue | 2016-12-08 (ICD, CPSY) |