| Presentation | 2016-12-12 First-Principles Calculation Studies of Resistive Switching Mechanism in Polycrystalline Metal Oxide Film Takumi Moriyama, Sohta Hida, Takahiro Yamasaki, Takahisa Ohno, Satoru Kishida, Kentaro Kinoshita, |
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| PDF Download Page |  PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | For practical use of Resistive Random Access Memory (ReRAM), clarifying physical properties of conducting path created in a metal oxide (MO) is important. These days, many studies predict characteristics of conducting path by using first-principles calculations, due to difficulties of direct observation of them. However, many calculations adopt TMO bulk single crystal model, whereas many ReRAM samples used in experiments consist of polycrystalline thin film, which means that the formation of conducting path in grain boundary of MO polycrystalline thin film is not considered in calculations. In this study, we experimentally clarified that the resistive switching is caused in the grain boundaries of the polycrystalline NiO film. Focusing on the surface orientation-dependences of MO surface conductivities, we also executed a first-principles molecular dynamics (MD) simulation at a finite temperature and clarified the drastic change of conductivity by a small amount of atom migration on the NiO grain surfaces. Since the MgO has the same tendencies, we suggested a model that can explain changes of the conductivities on MO grain surfaces by tiling micro surfaces that have various conductivities. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | ReRAM / Grain boundary / First-principles calculation / NiO / MgO |
| Paper # | EID2016-18,SDM2016-99 |
| Date of Issue | 2016-12-05 (EID, SDM) |
| Conference Information | |
| Committee | SDM / EID |
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| Conference Date | 2016/12/12(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | NAIST |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | Fabrication and Evaluation of Silicon Related Materials |
| Chair | Tatsuya Kunikiyo(Renesas) / Tomokazu Shiga(Univ. of Electro-Comm.) |
| Vice Chair | Takahiro Shinada(Tohoku Univ.) / Mutsumi Kimura(Ryukoku Univ.) / Yuko Kominami(Shizuoka Univ.) |
| Secretary | Takahiro Shinada(Tohoku Univ.) / Mutsumi Kimura(Renesas) / Yuko Kominami(NTT) |
| Assistant | Hiroya Ikeda(Shizuoka Univ.) / Rumiko Yamaguchi(Akita Univ.) / Hiroyuki Nitta(Japan Display) / Mitsuru Nakata(NHK) / Takashi Kojiri(ZEON) / Ryosuke Nonaka(Toshiba) |
| Paper Information | |
| Registration To | Technical Committee on Silicon Device and Materials / Technical Committee on Electronic Information Displays |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | First-Principles Calculation Studies of Resistive Switching Mechanism in Polycrystalline Metal Oxide Film |
| Sub Title (in English) | |
| Keyword(1) | ReRAM |
| Keyword(2) | Grain boundary |
| Keyword(3) | First-principles calculation |
| Keyword(4) | NiO |
| Keyword(5) | MgO |
| 1st Author's Name | Takumi Moriyama |
| 1st Author's Affiliation | Tottori University(Tottori Univ.) |
| 2nd Author's Name | Sohta Hida |
| 2nd Author's Affiliation | Tottori University(Tottori Univ.) |
| 3rd Author's Name | Takahiro Yamasaki |
| 3rd Author's Affiliation | National Institute for Materials Science(NIMS) |
| 4th Author's Name | Takahisa Ohno |
| 4th Author's Affiliation | National Institute for Materials Science(NIMS) |
| 5th Author's Name | Satoru Kishida |
| 5th Author's Affiliation | Tottori University(Tottori Univ.) |
| 6th Author's Name | Kentaro Kinoshita |
| 6th Author's Affiliation | Tottori University(Tottori Univ.) |
| Date | 2016-12-12 |
| Paper # | EID2016-18,SDM2016-99 |
| Volume (vol) | vol.116 |
| Number (no) | EID-354,SDM-355 |
| Page | pp.pp.41-44(EID), pp.41-44(SDM), |
| #Pages | 4 |
| Date of Issue | 2016-12-05 (EID, SDM) |