| Presentation | 2017-01-27 C-Ku band over 10 W Broadband Power Amplifier using Broadband Series-Shunt Inductor Matching Network Eigo Kuwata, Atsuo Sugimoto, Hidetoshi Koyama, Yoshitaka Kamo, Ryota Komaru, Koji Yamanaka, |
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| PDF Download Page |  PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | This paper reports on a Gallium Nitride High Electron Mobility Transistor (GaN HEMT) Monolithic Microwave Integrated Circuit (MMIC) high power amplifier (HPA), which features high efficiency and high power over C-Ku band with 115 % relative bandwidth. The amplifier uses a series-shunt inductor matching network to reduce chip size and the impedance transformation ratio in the interstage matching. The fabricated MMIC chip dimensions are 4.15 mm by 4 mm. Measured small signal gain exceeds 15.4 dB and the output power reaches 40.2 ~ 41.6 dBm with PAE of 17.3 ~ 30.5% over the C-Ku band at 25 V power supply voltage. With a CW output power ripple of 1.4 dB, this work shows significant improvement compared to previous work. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | Amplifiers / High Power Amplifier / MMIC / Band width / GaN HEMT / Broadband |
| Paper # | ED2016-110,MW2016-186 |
| Date of Issue | 2017-01-19 (ED, MW) |
| Conference Information | |
| Committee | MW / ED |
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| Conference Date | 2017/1/26(2days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | Kikai-Shinko-Kaikan Bldg. |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | Compound Semiconductor IC and High-Speed, High-Frequency Devices / Microwave Technologies |
| Chair | Yohei Ishikawa(Kyoto Univ.) / Koichi Maezawa(Univ. of Toyama) |
| Vice Chair | Takao Kuki(Kokushikan Univ.) / Kenjiro Nishikawa(Kagoshima Univ.) / Kenichi Tajima(Mitsubishi Electric) / Kunio Tsuda(Toshiba) |
| Secretary | Takao Kuki(Panasonic) / Kenjiro Nishikawa(Tokyo Inst. of Tech.) / Kenichi Tajima(JAIST) / Kunio Tsuda(New JRC) |
| Assistant | Naoto Sekiya(Univ. of Yamanashi) / Satoshi Ono(Univ. of Electro-Comm.) / Masataka Higashiwaki(NICT) / Toshiyuki Oishi(Saga Univ.) |
| Paper Information | |
| Registration To | Technical Committee on Microwaves / Technical Committee on Electron Devices |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | C-Ku band over 10 W Broadband Power Amplifier using Broadband Series-Shunt Inductor Matching Network |
| Sub Title (in English) | |
| Keyword(1) | Amplifiers |
| Keyword(2) | High Power Amplifier |
| Keyword(3) | MMIC |
| Keyword(4) | Band width |
| Keyword(5) | GaN HEMT |
| Keyword(6) | Broadband |
| 1st Author's Name | Eigo Kuwata |
| 1st Author's Affiliation | Mitsubishi Electric Corporation(Mitsubishi Electric) |
| 2nd Author's Name | Atsuo Sugimoto |
| 2nd Author's Affiliation | Mitsubishi Electric Corporation(Mitsubishi Electric) |
| 3rd Author's Name | Hidetoshi Koyama |
| 3rd Author's Affiliation | Mitsubishi Electric Corporation(Mitsubishi Electric) |
| 4th Author's Name | Yoshitaka Kamo |
| 4th Author's Affiliation | Mitsubishi Electric Corporation(Mitsubishi Electric) |
| 5th Author's Name | Ryota Komaru |
| 5th Author's Affiliation | Mitsubishi Electric Corporation(Mitsubishi Electric) |
| 6th Author's Name | Koji Yamanaka |
| 6th Author's Affiliation | Mitsubishi Electric Corporation(Mitsubishi Electric) |
| Date | 2017-01-27 |
| Paper # | ED2016-110,MW2016-186 |
| Volume (vol) | vol.116 |
| Number (no) | ED-431,MW-432 |
| Page | pp.pp.75-79(ED), pp.75-79(MW), |
| #Pages | 5 |
| Date of Issue | 2017-01-19 (ED, MW) |